Micromagnetic simulations show that asymmetry in SAF layers of 30 nm p-STT-MRAM nanopillars reduces required interlayer coupling for antiparallel states and modifies energy barriers, with stray fields playing a significant role.
Sbiaa, Magnetization switching by spin-torque effect in off-aligned structure with perpendicular anisotropy, Journal of Physics D: Applied Physics46, 395001 (2013)
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Magnetization alignment in spin-transfer-torque magnetic random-access memory
Micromagnetic simulations show that asymmetry in SAF layers of 30 nm p-STT-MRAM nanopillars reduces required interlayer coupling for antiparallel states and modifies energy barriers, with stray fields playing a significant role.