Implanted nitrogen in (100) β-Ga₂O₃ forms molecular N₂-like configurations instead of substitutional acceptors, as shown by N K-edge XANES spectra that intensify with annealing and are reproduced by first-principles simulations.
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Molecular Nitrogen Formation in Nitrogen-Implanted (100) $\beta-Ga_2O_3$ Revealed by Temperature-Dependent $N$ $K$-edge XANES
Implanted nitrogen in (100) β-Ga₂O₃ forms molecular N₂-like configurations instead of substitutional acceptors, as shown by N K-edge XANES spectra that intensify with annealing and are reproduced by first-principles simulations.