DFT plus Monte Carlo simulations predict itinerant ferromagnetism with Tc exceeding 160 K in p-doped MoS2 monolayers at 9% V concentration.
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DFT study reports that As substitution and interstitial doping in MoS2 monolayer introduce midgap defect states and shift the Fermi level to produce p-type or n-type character depending on site.
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Itinerant Ferromagnetism in p-doped Monolayers of MoS2
DFT plus Monte Carlo simulations predict itinerant ferromagnetism with Tc exceeding 160 K in p-doped MoS2 monolayers at 9% V concentration.
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First-principles study of the impact of As doping on the structural and electronic properties of MoS$_2$ monolayer
DFT study reports that As substitution and interstitial doping in MoS2 monolayer introduce midgap defect states and shift the Fermi level to produce p-type or n-type character depending on site.