A new microscopic model maps quantum dot device geometry directly to flopping-mode qubit parameters, reveals a tradeoff between fast electric driving and clean Rabi oscillations, and derives exchange coupling for capacitively coupled qubits.
Mohamed El Kordy and Simion, George and Li, Ruoyu and Mohiyaddin, Fahd A
2 Pith papers cite this work. Polarity classification is still indexing.
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2026 2verdicts
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3D simulations of nanosheet silicon spin qubits show millivolt bias variations reduce two-qubit gate fidelity below 99%.
citing papers explorer
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Microscopic modeling of flopping-mode quantum dot spin qubits
A new microscopic model maps quantum dot device geometry directly to flopping-mode qubit parameters, reveals a tradeoff between fast electric driving and clean Rabi oscillations, and derives exchange coupling for capacitively coupled qubits.
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Simulation of Two-qubit Gate Variability and Fidelity of Spin Qubits Built on Nanosheet Technology
3D simulations of nanosheet silicon spin qubits show millivolt bias variations reduce two-qubit gate fidelity below 99%.