DFT calculations on As-doped MoS2 monolayers find defect-induced midgap states and Fermi level shifts that produce p-type behavior for most substitutions and n-type for interstitial As, with suggested uses in photovoltaics and FETs.
C., Addou R., Wallace R
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First-principles study of the impact of As doping on the structural and electronic properties of MoS$_2$ monolayer
DFT calculations on As-doped MoS2 monolayers find defect-induced midgap states and Fermi level shifts that produce p-type behavior for most substitutions and n-type for interstitial As, with suggested uses in photovoltaics and FETs.