Alloyed interlayers mixing core and shell atoms plus vacancies in InAs/CdSe QDs restore band alignment and delocalized states while abrupt interfaces cause charge imbalance and gap collapse.
(38) Chatzigoulas, A.; Karathanou, K.; Dellis, D.; Cournia, Z
3 Pith papers cite this work. Polarity classification is still indexing.
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UNVERDICTED 3representative citing papers
A design study outlines how detector-grade Ge with ~2e14 cm^-3 In acceptors could enable a statistically selected five-qubit register with all-electrical control and manageable disorder.
Quantification of vdW gap trade-offs in 2D transistors reveals scaling limits for insulators and contacts, with zipper-like interfaces proposed to remove the gap.
citing papers explorer
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Detector-Grade Germanium as a Low-Disorder Host for Indium-Acceptor Spin Qubits: A Five-Qubit Materials-to-Architecture Design Study
A design study outlines how detector-grade Ge with ~2e14 cm^-3 In acceptors could enable a statistically selected five-qubit register with all-electrical control and manageable disorder.