A semi-analytical reaction-diffusion model predicts halo growth in pre-patterned Ag-Cu thin films follows power-law regimes of 1/2 or 2/7 depending on growth dimensionality, with experiments matching the 2/7 regime driven by grain boundary diffusion.
Ohring, Materials science of thin films: Deposition and Structure, Academic press
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Boron doping broadens the stability window of Cu2O and Cu4O3 phases in reactive-sputtered Cu-O films, delaying the shift to CuO and enabling resistivities as low as 0.06 Ω cm in mixed-valence regimes.
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Reaction-Diffusion Driven Patterns in Immiscible Alloy Thin Films
A semi-analytical reaction-diffusion model predicts halo growth in pre-patterned Ag-Cu thin films follows power-law regimes of 1/2 or 2/7 depending on growth dimensionality, with experiments matching the 2/7 regime driven by grain boundary diffusion.
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Boron-assisted stabilization of low-resistivity mixed-valence Cu-O thin films prepared by reactive magnetron sputtering
Boron doping broadens the stability window of Cu2O and Cu4O3 phases in reactive-sputtered Cu-O films, delaying the shift to CuO and enabling resistivities as low as 0.06 Ω cm in mixed-valence regimes.