Post-growth oxygen annealing of Sr-rich STO films on Si(001) removes excess Sr through two temperature-dependent segregation mechanisms to yield stoichiometric epitaxial layers.
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Wet infiltration co-dopes 3YSZ with Sc, Mg, and Y, producing samples with varying tetragonal and cubic phases plus altered hardness and translucency compared to standard 3YSZ and 5YSZ.
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Stoichiometric Epitaxial Strontium Titanate Thin Films on Silicon by High-Temperature Sr Segregation
Post-growth oxygen annealing of Sr-rich STO films on Si(001) removes excess Sr through two temperature-dependent segregation mechanisms to yield stoichiometric epitaxial layers.
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Structural effects of liquid infiltration of 3Y-Zirconia with Sc, Mg and Y
Wet infiltration co-dopes 3YSZ with Sc, Mg, and Y, producing samples with varying tetragonal and cubic phases plus altered hardness and translucency compared to standard 3YSZ and 5YSZ.