Microwave resonator and DC transport measurements identify qualitative signatures of multilevel π-junctions in gate voltage and inductive/dissipative response in a Ge/SiGe quantum dot.
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2 Pith papers cite this work. Polarity classification is still indexing.
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cond-mat.mes-hall 2years
2026 2verdicts
UNVERDICTED 2representative citing papers
Demonstrated gate-tunable supercurrents in Josephson junctions on Ge quantum wells with Ic >100 nA and IcRn=8.63 μV using in-situ Al contacts and deep mesa etch for low-loss integration.
citing papers explorer
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Multi-level {\pi}-junction in a proximitized Ge/SiGe quantum dot probed by an on-chip superconducting microwave resonator
Microwave resonator and DC transport measurements identify qualitative signatures of multilevel π-junctions in gate voltage and inductive/dissipative response in a Ge/SiGe quantum dot.
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Voltage-tunable Josephson Junctions on Germanium Quantum Wells with in-situ Aluminum Contacts
Demonstrated gate-tunable supercurrents in Josephson junctions on Ge quantum wells with Ic >100 nA and IcRn=8.63 μV using in-situ Al contacts and deep mesa etch for low-loss integration.