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Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness

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Correction Crossref 2 open · 2 total · 0 disputed

DOI: 10.1063/5.0031404
Notice DOI: 10.1063/5.0054625
Event date: 2021-05-04
Machine twin: JSON

01Notices on this DOI

Correction Crossref · 2021-05-04
Correction Crossref · 2021-03-12

02One-hop citing occurrences

Correction Open

Enhancing interfacial thermal conductance in Si/Diamond heterostructures by phonon bridge

ref [40] · 2507.22490 · notice #8681 · dispute

Raw extraction · bibliography line

Tran DQ, Delgado-Carrascon R, Muth JF, Paskova T, Nawaz M, Darakchieva V, et al. Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness. Appl Phys Lett 2020;117:252102. https://doi.org/10.1063/5.0031404

Correction Open

Enhancing interfacial thermal conductance in Si/Diamond heterostructures by phonon bridge

ref [40] · 2507.22490 · notice #8672 · dispute

Raw extraction · bibliography line

Tran DQ, Delgado-Carrascon R, Muth JF, Paskova T, Nawaz M, Darakchieva V, et al. Phonon-boundary scattering and thermal transport in AlxGa1−xN: Effect of layer thickness. Appl Phys Lett 2020;117:252102. https://doi.org/10.1063/5.0031404

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