The reviewed record of science sign in
Pith

arxiv: 2103.14617 · v1 · pith:X2HWD4DV · submitted 2021-03-26 · cond-mat.mes-hall · physics.app-ph

Transport measurements on van der Waals heterostructures under pressure

Reviewed by Pith T0 review T1 audit T2 compute T3 formal T4 kernel pith:X2HWD4DVrecord.jsonopen to challenge →

classification cond-mat.mes-hall physics.app-ph
keywords pressureinterlayercouplingmeasurementswaalsheterostructuresinfluencetransport
0
0 comments X
read the original abstract

The interlayer coupling, which has a strong influence on the properties of van der Waals heterostructures, strongly depends on the interlayer distance. Although considerable theoretical interest has been demonstrated, experiments exploiting a variable interlayer coupling on nanocircuits are scarce due to the experimental difficulties. Here, we demonstrate a novel method to tune the interlayer coupling using hydrostatic pressure by incorporating van der Waals heterostructure based nanocircuits in piston-cylinder hydrostatic pressure cells with a dedicated sample holder design. This technique opens the way to conduct transport measurements on nanodevices under pressure using up to 12 contacts without constraints on the sample at fabrication level. Using transport measurements, we demonstrate that hexagonal boron nitride capping layer provides a good protection of van der Waals heterostructures from the influence of the pressure medium, and we show experimental evidence of the influence of pressure on the interlayer coupling using weak localization measurements on a TMDC/graphene heterostructure.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.