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On-chip integrated Yb3+-doped waveguide amplifiers on thin film lithium niobate

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arxiv 2202.11548 v1 pith:QFNCEG3Z submitted 2022-02-23 physics.optics physics.app-ph

On-chip integrated Yb3+-doped waveguide amplifiers on thin film lithium niobate

classification physics.optics physics.app-ph
keywords lithiumniobatedopedwaveguideamplifiersfilmgainthin
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We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate waveguides demonstrates low propagation loss of 0.13 dB/cm at 1030 nm and 0.1 dB/cm at 1060 nm. The internal net gain of 5 dB at 1030 nm and 8 dB at 1060 nm are measured on a 4.0 cm long waveguide pumped by 976nm laser diodes, indicating the gain per unit length of 1.25 dB/cm at 1030 nm and 2 dB/cm at 1060 nm, respectively. The integrated Yb3+-doped lithium niobate waveguide amplifiers will benefit the development of a powerful gain platform and are expected to contribute to the high-density integration of thin film lithium niobate based photonic chip.

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