Multiple sliding ferroelectricity of rhombohedral-stacked InSe for reconfigurable photovoltaics and imaging applications

Through stacking engineering of two-dimensional (2D) materials, a switchable interface polarization can be generated through interlayer sliding, so called sliding ferroelectricity, which is advantageous over the traditional ferroelectricity due to ultra-thin thickness, high switching speed and low fatigue. However, 2D materials with intrinsic sliding ferroelectricity are still rare, with the exception of rhombohedral-stacked MoS2, which limits sliding ferroelectricity for practical applications such as high-speed storage, photovoltaic, and neuromorphic computing. Here, we reported the observation of sliding ferroelectricity with multiple states in undoped rhombohedral-stacked InSe ({\gamma}-InSe) via dual-frequency resonance tracking piezoresponse force microscopy, scanning Kelvin probe microscopy and conductive atomic force microscopy. The tunable bulk photovoltaic effect via the electric field is achieved in the graphene/{\gamma}-InSe/graphene tunneling device with a photovoltaic current density of ~15 mA/cm2, which is attributed to the multiple sliding steps in {\gamma}-InSe according to our theoretical calculations. The vdw tunneling device also features a high photo responsivity of ~255 A/W and a fast response time for real-time imaging. Our work not only enriches rhombohedral-stacked 2D materials for sliding ferroelectricity, but also sheds light on their potential for tunable photovoltaics and imaging applications.