pith. sign in

arxiv: 2409.17633 · v2 · pith:DJJRWCMYnew · submitted 2024-09-26 · ❄️ cond-mat.mes-hall · cond-mat.str-el

Direct measurement of terahertz conductivity in a gated monolayer semiconductor

classification ❄️ cond-mat.mes-hall cond-mat.str-el
keywords conductivityterahertzgatedmonolayerrangesemiconductorstechniquetwo-dimensional
0
0 comments X
read the original abstract

Two-dimensional semiconductors and their moir\'e superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain experimentally inaccessible because of the mesoscopic sample size. Here we report a technique to directly measure the complex conductivity of electrostatically gated two-dimensional semiconductors in the terahertz frequency range. Applying this technique to a WSe2 monolayer encapsulated in hBN, we observe clear Drude-like response between 0.1 and 1 THz, in a density range challenging to access even in DC transport. Our work opens a new avenue for studying tunable van der Waals heterostructures using terahertz spectroscopy.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Forward citations

Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Temperature-induced optical enhancement near a localization transition

    cond-mat.dis-nn 2026-05 unverdicted novelty 6.0

    Finite temperature strongly enhances low-frequency optical conductivity near the localization transition in the Aubry-André model via thermal activation of Pauli-blocked transitions between resonant van Hove singularities.