Mott-Hubbard Scenario for the Metal-Insulator Transition in the Two Dimensional Electron Gas

By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between independent measurables are uncovered and confirmed by replotting the experimental data. A universal critical energy scale vanishing at the MIT is extracted from the experimental data and the critical exponent found.