A possible role of D^- band in hopping conductivity and metal-insulator transition in 2D structures

Bangladesh); I. Shlimak (Bar-Ilan University; Israel); N. V.Agrinskaya (A. F. Ioffe Institute; Russia); Saint Petersburg; S. I.Khondaker (Dhaka University; V.I.Kozub

arxiv: cond-mat/9911450 · v1 · submitted 1999-11-27 · ❄️ cond-mat.mes-hall · cond-mat.dis-nn

A possible role of D^- band in hopping conductivity and metal-insulator transition in 2D structures

V.I.Kozub , N. V.Agrinskaya (A. F. Ioffe Institute , Saint Petersburg , Russia) , S. I.Khondaker (Dhaka University , Bangladesh) , I. Shlimak (Bar-Ilan University , Israel) This is my paper

classification ❄️ cond-mat.mes-hall cond-mat.dis-nn

keywords bandhoppingmodelconductivitymagnetoresistancemetal-insulatorstructurestransition

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A simple two-band model is suggested explaining recently reported unusual features for hopping magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D^- band). Experimental studies of hopping magnetoresistance for Si delta doped GaAs/AlGaAs heterostructure give additional evidences for the model.

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A possible role of D^- band in hopping conductivity and metal-insulator transition in 2D structures

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