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REVIEW 3 major objections 5 minor 66 references

Electron and positron channeling and photon emission processes in boron doped periodically bent diamond

T0 review · 3 major / 5 minor · reviewed 2026-08-07 · deepseek-v4-flash

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Pith's one-line read Aligning the beam to the bend's entrance tangent maximizes channeling and undulator radiation in boron-doped diamond.

desk verdict A useful, honest design study for crystalline undulators: entrance alignment matters more than anything else, but the specific acceptance numbers are conditional on a 50% uncertainty in the Vegard coefficient. read the letter →

arxiv 2505.20037 v2 pith:WG43IFWK submitted 2025-05-26 physics.acc-ph physics.app-phphysics.atom-ph

Andrei V. Korol , Andrey V. Solov'yov This is my paper · ORCID
classification physics.acc-phphysics.app-phphysics.atom-ph
keywords crystallineundulatorboron-dopeddiamondplanarchannelinglatticeexpansionlawradiationbeamalignmentrelativisticmoleculardynamicspositron
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper establishes how the (-110) planes of a diamond layer periodically doped with boron are bent, and why that shape fixes the best beam direction for a crystalline undulator. Because the boron concentration varies along the growth direction, the layer's centerline is tilted relative to the substrate's crystallographic direction by an angle set by the mean dopant level, and the tangent at the entrance is tilted by an additional amount set by the doping modulation. Using atomistic simulations of 855 MeV electrons and 530 MeV positrons in a four-period boron-doped diamond, the paper shows that aiming the beam along that entrance tangent gives channeling fractions of about 0.4 for electrons and 0.8 for positrons, while aiming along the substrate's (-110) direction can reduce the signal dramatically or, for the larger of the two lattice-expansion coefficients, essentially eliminate channeling. The same alignment determines where the undulator radiation cone points, so the detector must be placed along the predicted centerline. Positrons emit substantially stronger undulator radiation than electrons under identical entrance conditions.

What carries the argument

The load-bearing identity is the geometric mapping from dopant concentration to bent-plane profile: $dY/dZ=\tan\Phi(Z)=a_0/a_\perp(Z)\approx 1-\kappa n_B(Z)$, integrated to give $y(z)$ with undulatory period $\lambda_u=\sqrt{2}\lambda_B$ and amplitude $\kappa(n_{\max}-n_{\min})\lambda_u/(8\pi)$ for sine/cosine doping (smaller by a factor $4/\pi$ for saw doping). The profile's centerline slope $\alpha_1$ and entrance tangent slope $\alpha$ are the two quantities that set the optimal incident beam direction and the undulator axis on which the detector must be placed. The simulations then use relativistic molecular dynamics to follow particle trajectories in the atomistic crystal, account for thermal vibrations and inelastic scattering, and compute spectral-angular radiation distributions within cones of opening $\theta_0$ around chosen axes.

What would settle it

Measure the entrance tangent angle of a real periodically boron-doped diamond layer by high-resolution X-ray diffraction of the (-110) plane positions and compare with Eq. (12) using both $\kappa$ values; if neither matches within the experimental uncertainty, the linear-expansion-plus-local-tilt model fails. Alternatively, in an 855 MeV electron experiment, rotate the beam from the predicted entrance tangent by the planar-channeling critical angle and check that the narrow CUR first harmonic near the energy of Eq. (16) disappears as the channeling fraction drops.

Watch

Extended reading notes

Core claim

The central claim is that the profile of the bent (-110) plane is not symmetric about the substrate direction: with the linear lattice-expansion relation $a_\perp(Z)=a_0(1+\kappa n_B(Z))$ and the local-tilt relation $dY/dZ=a_0/a_\perp$, the plane profile becomes $y(z)=-\kappa[(n_{\max}+n_{\min})z-(n_{\max}-n_{\min})f(z)]/4$, giving an undulator axis tilted by $\alpha_1=\kappa(n_{\max}+n_{\min})/4$ and an entrance tangent tilted by $\alpha=\alpha_1-\kappa(n_{\max}-n_{\min})(df/dz)|_{z=0}/4$. These angles are of the order of hundreds of microradians, comparable to the planar-channeling critical angle for the bent channel, so the choice of beam orientation determines whether particles are captured. In atomistic simulations, alignment A2 (beam along the entrance tangent) yields channeling fractions of about 0.4 (electrons) and 0.8 (positrons) for $\kappa[54]$, with clear crystalline-undulator-radiation (CUR) harmonics, whereas alignment A1 (beam along the substrate's (-110) direction) gives near-zero channeling for $\kappa[56]$ and only smooth bremsstrahlung. The first-harmonic energy obeys the standard undulator formula $\hbar\omega_1\approx 9.5\,\varepsilon^2[\text{GeV}]/(\lambda_u[\mu\text{m}]\,(1+K^2/2+(\gamma\theta)^2))$ MeV, and the positron spectra are noticeably stronger than the electron spectra for the same entrance conditions.

Load-bearing premise

The paper assumes the crystal bends as a local, elastic response to the boron concentration, with a linear expansion coefficient that the literature puts at two values differing by 50 percent; if the real lattice relaxes, dislocates, or has a different expansion coefficient, the predicted tangent angle and channeling fractions shift or vanish.

Editorial extensions

If this is right

  • For any measured boron depth profile $n_B(Z)$, including SIMS data from a real sample, Eqs. (4)-(7) uniquely determine the entrance tangent and centerline directions, so beam alignment and detector placement can be precomputed.
  • The 'sine' doping scheme has $df/dz=0$ at the entrance, making the tangent coincide with the centerline; this scheme can be used without a separate beam-alignment step.
  • The acceptance for entrance-tangent alignment follows the straight-channel scaling $A=(1-C)A_0$, so the bending parameter $C=F_{\rm cf}/U'_{\max}$ directly predicts how much of the ideal acceptance survives in a bent channel.
  • Positrons give more intense crystalline undulator radiation than electrons under the same entrance conditions, so positron beams are the favourable choice for a boron-doped diamond undulator source.
  • For the larger lattice-expansion coefficient $\kappa[56]$, substrate-direction alignment depletes the channeling mode almost completely, so a wrong choice of $\kappa$ or of beam orientation converts the expected narrow CUR peaks into a smooth bremsstrahlung background.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Extension: the 50 percent spread between the two lattice-expansion coefficients means a direct diffraction measurement of the lattice expansion $a_\perp(Z)$ in a real boron-doped layer would discriminate between the two predicted profiles and settle the correct tangent angle.
  • Extension: the same tangent-alignment protocol transfers to other graded-composition crystals and other channeling planes; only the lattice-expansion coefficient and the crystallographic geometry factor change.
  • Extension: because the on-axis CUR cone has opening of order $1/\gamma$, the incident beam divergence must be small compared with both $\alpha_1$ and $\theta_L$; reducing the beam divergence used in the current simulations should push acceptance closer to the $(1-C)A_0$ limit.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript develops an analytical model for the shape of (-110) planes in boron-doped diamond heterostructures, based on a linear Vegard expansion (Eq. 1) and a local-tilt relation (Eq. 4), and then uses MBN Explorer to simulate channeling and photon emission for 855 MeV electrons and 530 MeV positrons in a four-period saw-doped diamond. The central numerical finding is that the channeling acceptance and the crystalline-undulator radiation (CUR) intensity are strongly enhanced when the incident beam is aligned with the tangent of the bent profile at z=0 (alignment A2) rather than with the substrate (-110) direction (A1), with positron radiation more intense than electron radiation under the same entrance conditions. The paper also analyzes a quasi-periodic doping profile and checks the CUR peak positions against the standard undulator formula, Eq. (16).

Significance. If the quantitative results are reliable, the paper provides a useful design input for crystalline undulators made of boron-doped diamond and a concrete, testable prediction about beam alignment. The analytic geometry is internally consistent, the simulation protocol is mature (MBN Explorer with thermal vibrations and inelastic scattering), and the peak positions are cross-checked against an independent analytic formula rather than fitted. The main weakness is that the headline numbers are controlled by an uncertain input coefficient kappa, and the paper itself acknowledges that the literature does not permit a definitive choice; the quantitative content is therefore conditional on a parameter value that is not yet fixed.

major comments (3)
  1. [Section III A, Eq. (2), Figs. 4-8] The quantitative content of the central claim is controlled by the choice of kappa. The acceptance values quoted in the text (A2 about 0.4 for electrons and 0.8 for positrons) are stated for kappa[54], while Eq. (2) gives a second literature value kappa[56] that is 50% larger. Section III A 2 reports that with kappa[56] the A1 fraction 'virtually disappears' for both projectile types, and even the A2 fractions are reduced. Since Section IV explicitly says the available data do not permit a definitive choice of kappa, the numerical acceptance and intensity values in the abstract and conclusion are not a stable quantitative prediction. The authors should either supply a firmer determination of kappa (for example, an atomistic MD benchmark or an experimental constraint) or reframe the central claim as a robust qualitative orientation effect accompanied by a parametric sensitivity study.
  2. [Section II, Eq. (4)] The bending profile is built on the local-tilt relation dY/dZ = a0/a_perp(Z), which assumes that the doped layer is coherently clamped to the substrate, with no strain relaxation, misfit dislocations, or miscut effects. This geometric mapping is a load-bearing input for all subsequent simulations, but it is not validated in the manuscript against atomistic simulation or direct measurement. Given the demonstrated sensitivity of the results to kappa, the same level of scrutiny should be applied to the validity of this relation; a short validation or an explicit statement of this additional uncertainty is needed before the quantitative profile predictions can be taken at face value.
  3. [Figs. 4-8] The simulated channeling fractions and spectral distributions are presented without any measure of statistical uncertainty, despite the use of approximately 12,000 trajectories per case. The abstract-level claim that, for the same entrance conditions, the intensity of radiation emitted by positrons is significantly higher than for electrons requires a statistical comparison; without error bars or run-to-run variance, this ordering cannot be distinguished from simulation noise. Adding at least bootstrap confidence bands or a statement of the expected statistical fluctuation would materially strengthen the quantitative conclusions.
minor comments (5)
  1. [Abstract] The abstract contains an incomplete sentence: 'The planar profiles for periodic doping following several ideal dependencies of the boron concentration on the distance in the crystalline medium.' It also has a typo in the title line ('proce sses' in the arXiv rendering).
  2. [Section II, Eq. (8c)] The notation 'Z/lambda_B = [k, k+0.5]' for intervals is ambiguous; it should read 'k <= Z/lambda_B < k+0.5' (and similarly for the second half-interval).
  3. [Section III B, Fig. 9] The caption and text distinguish the centreline of the fit (alpha1 = 547 microrad) from the line connecting the endpoints of the calculated profile (461 microrad), but the graph itself labels both dashed lines with 'alpha1'; this should be clarified to avoid confusion.
  4. [Introduction] There is a typo, 'existance', in the paragraph discussing the first observation of the CUR peak; also 'the intestity' appears in the abstract of the arXiv version.
  5. [References] Reference [27] lists 'A.V. Korol, A.V. Korol, Solov'yov' and should be corrected to 'A.V. Korol, A.V. Solov'yov, and W. Greiner'.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the central claims are emergent simulation results with external parameters, not reduced to the paper's own inputs by construction.

full rationale

The paper's main quantitative claims are emergent outputs of atomistic RelMD simulations, not consequences of its inputs. The bending profile is constructed from Eq. (1) (Vegard relation with external κ from Refs. [54] and [56]) and Eq. (4) (geometric local-tilt relation); these are physical modeling assumptions with literature-based parameters, not fitted to the channeling or radiation data. The claim that tangent alignment maximizes channeling is quantified by simulation and checked against the standard undulator formula, Eq. (16), and against the external straight-channel acceptance A0 through the standard relation A = (1-C)A0; the simulated acceptances are not adjusted to match these references. The paper's self-citations (MBN Explorer, earlier CUR predictions in Refs. [43,44]) are methodological or historical and are not load-bearing for the new results. The acknowledged 50% spread in κ is an external parameter uncertainty and is explicitly flagged by the authors as unresolved; it affects robustness of the quantitative conclusions but does not constitute circularity. No equation reduces to another by construction, and no fitted input is renamed as a prediction.

Assumptions & free parameters 2 free parameters · 4 assumptions · 0 invented entities

Central outputs rest on two external material inputs (κ from Refs. [54]/[56] and the sample doping profile), a geometric strain-to-tilt mapping, and the classical MD radiation framework. No new entities are introduced. The two κ values are the main source of quantitative uncertainty.

free parameters (2)
  • Boron lattice expansion coefficient κ = 5.38e-25 cm^3 (Ref. [54]) or 8.12e-25 cm^3 (Ref. [56])
    Enters Eq. (1) and scales every profile amplitude, centerline angle, and bending parameter. The two literature values differ by about 50 percent and are used as alternatives because no unique value is established.
  • Sinusoidal fit parameters in Case Study II (α1, a, λu) = 547 µrad, 2.1 Å, 4.9 µm
    Used to approximate the quasi-periodic model profile in Fig. 9 for comparison with an ideal periodic undulator; fitted to the calculated profile, not to experimental data.
assumptions (4)
  • domain assumption Linear Vegard relation a⊥(Z)=a0(1+κ nB(Z)) with κ from Refs. [54] or [56] describes the lattice expansion of boron-doped diamond.
    Used in Sec. II to derive the bending profile; the paper does not calculate κ atomistically and notes that MD simulations are ongoing.
  • domain assumption Local crystallographic tilt follows dY/dZ = a0/a⊥ ≈ 1-κ nB(Z), with no elastic relaxation, dislocations, or finite-size corrections.
    This converts the assumed concentration profile into the undulator shape; if the strain field relaxes, all profile amplitudes and acceptance angles change.
  • domain assumption Classical Relativistic Molecular Dynamics with stochastic treatment of inelastic collisions and thermal vibrations adequately describes channeling and radiation at these energies.
    Used for all trajectories; backed by earlier MBN Explorer studies (Refs. [45,48,49]) but not independently verified here.
  • standard math Standard undulator radiation formula Eq. (16) with K^2=K_u^2+K_ch^2 gives the CUR harmonic energies.
    Used to compare peak positions; this is textbook undulator theory.

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Cite this review

Pith. "Pith review of Electron and positron channeling and photon emission processes in boron doped periodically bent diamond." pith.science (2026). https://pith.science/paper/WG43IFWK

@misc{pith2026250520037,
  author       = {Pith},
  title        = {Pith review of: Electron and positron channeling and photon emission processes in boron doped periodically bent diamond},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/WG43IFWK}},
  note         = {Machine review of arXiv:2505.20037}
}
read the original abstract

In this paper, theoretical and numerical analyses are conducted of the profiles of the planar (-110) crystallographic direction in the diamond layer doped with boron atoms. The planar profiles for periodic doping following several ideal dependencies of the boron concentration on the distance in the crystalline medium. Numerical simulations of the channeling and photon emission processes have been carried out for 855 MeV electron and 530 MeV positron beams incident on boron-doped diamond with a four-period bending profile in the samples grown at the European Synchrotron Radiation Facility (ESRF). The simulations were performed using the MBN Explorer software package. It is shown that the channeling efficiency and the intensity of the crystalline undulator radiation strongly depend on the orientation of the incident beam relative to the bent channel profile at the entrance to the boron-doped layer. For the same conditions at the crystal entrance, the intensity of radiation emitted by positrons is significantly higher than that for electrons.

Figures

Figures reproduced from arXiv: 2505.20037 by the authors.

Figure 1
Figure 1. FIG. 1. Sketch of the deformation of the crystal structure in [PITH_FULL_IMAGE:figures/full_fig_p005_1.png] view at source ↗
Figure 2
Figure 2. FIG. 2. First two periods of the ”cosine”, ”sine” and ”saw” de [PITH_FULL_IMAGE:figures/full_fig_p008_2.png] view at source ↗
Figure 3
Figure 3. FIG. 3. Solid curves show the profile [PITH_FULL_IMAGE:figures/full_fig_p011_3.png] view at source ↗
Figures from the paper (9 more)
Figure 4
Figure 4. Figure 4: FIG. 4. Channeling fractions of accepted particles versus p [PITH_FULL_IMAGE:figures/full_fig_p013_4.png]
Figure 5
Figure 5. Figure 5: FIG. 5. Spectral distributions of radiation for 530 MeV posi [PITH_FULL_IMAGE:figures/full_fig_p015_5.png]
Figure 6
Figure 6. Figure 6: FIG. 6. Same as in Fig. 5 but for 855 MeV electrons. [PITH_FULL_IMAGE:figures/full_fig_p016_6.png]
Figure 7
Figure 7. Figure 7: FIG. 7. Same as in Fig. 5 but for the P [PITH_FULL_IMAGE:figures/full_fig_p017_7.png]
Figure 8
Figure 8. Figure 8: FIG. 8. Same as in Fig. 6 but for the P [PITH_FULL_IMAGE:figures/full_fig_p018_8.png]
Figure 9
Figure 9. Figure 9: FIG. 9. Four-period boron-doped diamond with model doping. [PITH_FULL_IMAGE:figures/full_fig_p019_9.png]
Figure 10
Figure 10. Figure 10: FIG. 10. Spectral distributions of radiation for 530 MeV pos [PITH_FULL_IMAGE:figures/full_fig_p020_10.png]
Figure 11
Figure 11. Figure 11: FIG. 11. Same as for Fig. 10 but for 855 MeV electrons. The emis [PITH_FULL_IMAGE:figures/full_fig_p021_11.png]
Figure 12
Figure 12. Figure 12: FIG. 12. Periodic parts of the profile (10) calculated for the [PITH_FULL_IMAGE:figures/full_fig_p023_12.png]

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Reference graph

Works this paper leans on

66 extracted references · 33 canonical work pages

  1. [54]

    Brazhkin, E.A

    V.V. Brazhkin, E.A. Ekimov, A.G. Lyapin, S.V. Popova, A .V. Rakhmanina, S.M. Stishov, V.M. Lebedev, Y. Katayama, and K. Kato, Lattice parameters a nd thermal expansion of superconducting boron-doped diamonds, Phys. Rev. B 74, 140502 (2006) ( https://doi. org/10.1103/PhysRevB.74.140502)

    doi:10.1103/physrevb.74.140502 2006

  2. [56]

    Vegard, Die Konstitution der Mischkristalle und die Raumf¨ ullung der Atome,Z

    L. Vegard, Die Konstitution der Mischkristalle und die Raumf¨ ullung der Atome,Z. Physik 5, 17-26 (1921) ( https://doi.org/10.1007/BF01349680)

    doi:10.1007/bf01349680 1921

  3. [1]

    Lindhard, Influence of crystal lattice on motion of ene rgetic charged particles, K

    J. Lindhard, Influence of crystal lattice on motion of ene rgetic charged particles, K. Dan. Vidensk. Selsk. Mat. Fys. Medd. 34, 1 (1965). ( https://gymarkiv.sdu.dk/MFM/kdvs/mfm\ %2030-39/mfm-34-14.pdf )

    work page 1965

  4. [2]

    U. I. Uggerhøj, The interaction of relativistic particl es with strong crystalline fields, Rev. Mod. Phys., 77, 1131-1171 (2005)

    work page 2005

  5. [3]

    Biryukov, Yu.A

    V.M. Biryukov, Yu.A. Chesnokov and V.I. Kotov. Crystal Channeling and its Application at High-Energy Accelerators. (Springer Science & Business Media, 2013)

    work page 2013

  6. [4]

    A. V. Korol, A. V. Solov’yov, and Walter Greiner, Channeling and Radiation in Periodically Bent Crystals (2nd ed.), (Springer Series on Atomic, Optical, and Plasma Physics, vo l. 69. Springer-Verlag, Heidelberg, New York, Dordrecht, London , 2014)

    work page 2014

  7. [5]

    Korol and A.V

    A.V. Korol and A.V. Solov’yov, Novel Light Sources beyond Free Electron Lasers (Springer Nature Switzerland AG, 2022)

    work page 2022

  8. [6]

    Mazzolari, M

    A. Mazzolari, M. Romagnoni, R. Camattari, E. Bagli, L. Ba ndiera, G. Germogli, V. Guidi, and G. Cavoto, Bent crystals for efficient beam steering of mul ti TeV-particle beams, Eur. Phys. J. C 78, 720 (2018). ( https://doi.org/10.1140/epjc/s10052-018-6196-z )

    doi:10.1140/epjc/s10052-018-6196-z 2018

Show all 66 references
  1. [7]

    Afonin, V.T

    A.G. Afonin, V.T. Baranov, V.M. Biryukov, M.B.H. Breese , V.N. Chepegin, Yu.A. Ches- nokov, V. Guidi, Yu.M. Ivanov, V.I. Kotov, G. Martinelli, W. Scandale6, M. Stefancich, V.I. Terekhov, D. Trbojevic, E.F. Troyanov, and D. Vincenzi, Hig h-Efficiency Beam Extraction 25 and Collim...

    2001 doi

  2. [8]

    Scandale, G

    W. Scandale, G. Arduini, F. Cerutti, M. Garattini, S. Gil ardoni, A. Masi, D. Mirarchi, S. Montesano, S. Petrucci, S. Redaelli, R. Rossi, D. Breton, L. Burmistrov, S. Dubos, J. Maalmi, A. Natochii, V. Puill, A. Stocchi, D. Sukhonos, E. Bagli, L. B andiera, V. Guidi, A. Mazzola...

    2018

  3. [9]

    Sytov, G

    A. Sytov, G. Kube, L. Bandiera, P. Cirrone, H. Ehrlichman n, V. Guidi, V. Haurylavets, M. Romagnoni, M. Soldani, M. Stanitzki, M. Tamisari, V. Tikh omirov, K. Wittenburg, and A. Mazzolari, First design of a crystal-based extraction of 6 GeV electrons for the DESY II Booster Sy...

    2022 doi

  4. [10]

    Sushko, A.V

    G.B. Sushko, A.V. Korol, and A.V. Solov’yov, Extremely brilliant crystal-based light sources, Europ. Phys. J. D 76, 166 (2022)

    2022

  5. [11]

    Korol and A.V

    A.V. Korol and A.V. Solov’yov, Atomistic modeling and c haracterizaion of light sources based on small-amplitude short-period periodically bent crysta ls, Nucl. Inctrum. Meth. B 537, 1 (2023)

    2023

  6. [12]

    http://www.mbnresearch.com/TECHNO-CLS/Main

  7. [13]

    Sushko, A.V

    G.B. Sushko, A.V. Korol, and A.V. Solov’yov, Intense γ-ray light sources based on oriented single crystals, Phys. Rec. Accel. Beams 27, 100703 (2024) ( https://doi.org/10.1103/ PhysRevAccelBeams.27.100703)

    2024

  8. [14]

    Korol, A.V

    A.V. Korol, A.V. Solov’yov, and Walter Greiner, Cohere nt radiation of an ultrarelativistic charged particle channeled in a periodically bent crystal, J. Phys. G: Nucl. Part. Phys. 24, L45-L53 (1998) ( https://doi.org/10.1088/0954-3899/24/5/001 )

    1998 doi

  9. [15]

    Korol, A.V

    A.V. Korol, A.V. Solov’yov, and Walter Greiner, Channe ling of Positrons through Periodically Bent Crystals: On the Feasibility of Crystalline Undulator and Gamma-Laser, Int. J. Mod. Phys. E 13, 867-916 (2004) ( https://doi.org/10.1142/S0218301304002557). 26

    2004 doi

  10. [16]

    Tabrizi, M., A

    M. Tabrizi, M., A. V. Korol, A. V. Solov’yov, and W. Grein er, Feasibility of an electron- based crystalline undulator. Phys. Rev. Lett. 98, 164801 (2007) ( https://doi.org/10.1103/ PhysRevLett.98.164801)

    2007

  11. [17]

    M. A. Kumakhov, On the theory of electromagnetic radiat ion of charged particles in a crystal. Phys. Lett. 57A, 17 (1976) ( https://doi.org/10.1016/0375-9601(76)90438-2 )

    1976 doi

  12. [18]

    Bellucci, S

    S. Bellucci, S. Bini, V.M. Biryukov, Yu.A. Chesnokov, S . Dabagov, G. Giannini, V. Guidi, Yu.M. Ivanov, V.I. Kotov, V.A. Maisheev, C. Malag` u, G. Mart inelli, A. A. Petrunin, V.V. Skorobogatov, M. Stefancich, and D. Vincenzi, Experimenta l Study for the Feasibility of a Cryst...

    2003

  13. [19]

    Balling, J

    P. Balling, J. Esberg, K. Kirsebom, D.Q.S. Le, U.I. Ugge rhøj, S.H. Connell, J. H¨ artwig, F. Masiello. and A. Rommeveaux, Bending diamonds by femtose cond laser ablation, Nucl. Instrum. Meth. B 267, 2952-2957 (2009) ( http://dx.doi.org/10.1016/j.nimb.2009.06. 109)

    2009 doi

  14. [20]

    Guidi, A

    V. Guidi, A. Antonioni, S. Baricordi, F. Logallo, C. Mal ag` u, E. Milan, A. Ronzoni, M. Ste- fancich, G. Martinelli, and A. Vomiero, Tailoring of silico n crystals for relativistic-particle channeling, Nucl. Instrum. Meth. B 234, 40 (2005) ( https://doi.org/10.1016/j.nimb. 20...

    2005 doi

  15. [21]

    Bagli, L

    E. Bagli, L. Bandiera, V. Bellucci, A. Berra, R. Camatta ri, D. De Salvador, G. Germogli, V. Guidi, L. Lanzoni, D. Lietti, A. Mazzolari, M. Prest, V. V. Tikhomirov and E. Valla. Experimental evidence of planar channeling in a periodical ly bent crystal. Eur. Phys. J. C 74, 311...

    2014 doi

  16. [22]

    Guidi, A

    V. Guidi, A. Mazzolari, G. Martinelli, and A. Tralli, De sign of a crystalline undulator based on patterning by tensile Si 3N4 strips on a Si crystal, Appl. Phys. Lett. 90, 114107 (2007), (https://doi.org/10.1063/1.2712510)

    2007 doi

  17. [23]

    Guidi, L

    V. Guidi, L. Lanzoni, and A. Mazzolari. Patterning and m odeling of mechanically bent silicon plates deformed through coactive stresses, Thin Solid Films 520, 1074 (2011), ( https://doi. org/10.1016/j.tsf.2011.09.008)

    2011 doi

  18. [24]

    Malagutti, L

    L. Malagutti, L. Bandiera, F. Bonaf` e, N. Canale, D. De S alvador, P. Fedeli, V. Guidi, A.V. Korol, F. Mancarella, R. Negrello, G. Patern` o, M. Romagnon i, F. Sgarbossa, A.V. Solov’yov, A. Sytov, D. Valzani, A. Mazzolari From simulation to fabric ation: Realizing silicon cry...

    2025

  19. [25]

    Camattari, G

    R. Camattari, G. Patern` o, M. Romagnoni, V. Bellucci, A . Mazzolari, and V. Guidi, Ho- mogeneous self-standing curved monocrystals, obtained us ing sandblasting, to be used as manipulators of hard X-rays and charged particle beams. J. Appl. Cryst. 50, 145-151 (2017) (https://...

    2017 doi

  20. [26]

    Bellucci, R

    V. Bellucci, R. Camattari, V. Guidi, A. Mazzolari, G. Pa terno, G. Mattei, C. Scian and L. Lanzoni, Ion implantation for manufacturing bent and perio dically bent crystals. Appl. Phys. Lett. 107, 064102 (2015), ( https://doi.org/10.1063/1.4928553)

    2015 doi

  21. [27]

    Korol, A.V

    A.V. Korol, A.V. Korol, Solov’yov, and W. Greiner, Phot on emission by an ultra-relativistic particle channeling in a periodically bent crystal. Int. J. Mod. Phys. E 8, 49 (1999) ( https: //doi.org/10.1142/S0218301399000069)

    1999 doi

  22. [28]

    Baryshevsky, I.Ya

    V.G. Baryshevsky, I.Ya. Dubovskaya, A.O. Grubich, Gen eration of γ-quanta by channeled particles in the presence of a variable external field, Phys. Lett. A 77, 61-64 (1980) doi = 10.1016/0375-9601(80)90637-4,

    1980 doi

  23. [29]

    Kaleris, E

    K. Kaleris, E. Kaselouris, V. Dimitriou, E. Kaniolakis -Kaloudis, M. Bakarezos, M. Tatarakis, N. A. Papadogiannis, G.B. Sushko, A.V. Korol, A.V. Solov’yo v Narrowband γ-ray radiation generation by acoustically driven crystalline undulators Phys. Rev. Accel. Beams 28, 033502 (2...

    2025 doi

  24. [30]

    Breese, Beam bending using graded composition s trained layers, Nucl

    M.B.H. Breese, Beam bending using graded composition s trained layers, Nucl. Instrum. Meth. B 132, 540 (1997) ( https://doi.org/10.1016/S0168-583X(97)00455-2 )

    1997 doi

  25. [31]

    Mikkelsen and E

    U. Mikkelsen and E. Uggerhøj, A crystalline undulator b ased on graded composition strained layers in a superlattice, Nucl. Instrum. Meth. B 160, 435-439 (2000) ( https://doi.org/10. 1016/S0168-583X(99)00637-0 )

    2000

  26. [32]

    Avakian, K.N

    R.O. Avakian, K.N. Avetyan, K.A. Ispirian, E.G. Meliky an, Bent crystallographic planes in gradient crystals and crystalline undulators, Nucl. Instrum. Meth. A 508, 496-499 (2003) (https://doi.org/10.1016/S0168-9002(03)01656-5 )

    2003 doi

  27. [33]

    Sakai, Silicon-germanium (SiGe) crystal growth usi ng molecular beam epitaxy, In: Silicon- Germanium (SiGe) Nanostructures

    A. Sakai, Silicon-germanium (SiGe) crystal growth usi ng molecular beam epitaxy, In: Silicon- Germanium (SiGe) Nanostructures. Woodhead Publishing Ser ies in Electronic and Optical Materials, Shiraki, Y., Usami, N. (eds.) (Woodhead Publishing, Cham, 2011), pp.83–116 (https://d...

    2011 doi

  28. [34]

    Connell, J

    S.H. Connell, J. H¨ artwig, A. Masvaure, D. Mavunda, T.N . Tran Thi, Towards a crystal undu- lator. In: Engelbrecht, C., Karataglidis, S. (eds.), Proce edings of the 59th Annual Conference of the South African Institute of Physics (SAIP2014), pp. 16 9–174. (University of Johan...

    2015

  29. [35]

    Backe, D

    H. Backe, D. Krambrich, W. Lauth, K. K. Andersen, J. L. Ha nsen, and U.K. Uggerhøj, Radiation emission at channeling of electrons in a strained layer Si 1−xGex undulator crystal, Nucl. Instrum. Meth. B 309, 37-44 (2013) ( https://doi.org/10.1016/j.nimb.2013.03. 047)

    2013 doi

  30. [36]

    Backe, D

    H. Backe, D. Krambrich, W. Lauth, K. K. Andersen, J. L. Ha nsen, and U. I. Uggerhøj, Channeling and radiation of electrons in silicon single cry stals and Si 1−xGex crystalline un- dulators, J. Phys. Conf. Ser. 438, 012017 (2013) ( https://doi.org/10.1088/1742-6596/ 438/1/012017)

    2013 doi

  31. [37]

    Backe, D

    H. Backe, D. Krambrich, W. Lauth, J. Lundsgaard Hansen, U.K.I. Uggerhøj, X-ray emission from a crystal undulator: Experimental results at channeli ng of electrons, Nuovo Cimento C 34, 157-165 (2011) ( https://doi.org/10.1393/ncc/i2011-10938-2 )

    2011 doi

  32. [38]

    T. N. Wistisen, K. K. Andersen, S. Yilmaz, R. Mikkelsen, J. L. Hansen, U. I. Uggerhøj, W. Lauth, and H. Backe, Experimental realization of a new type o f crystalline undulator, Phys. Rev. Lett. 112, 254801 (2014) ( https://doi.org/10.1103/PhysRevLett.112.254801)

    2014 doi

  33. [39]

    U. I. Uggerhøj and T. N. Wistisen, Intense and energetic radiation from crystalline undulators, Nucl. Instrum Meth. B 355, 35-39, (2015) ( https://doi.org/10.1016/j.nimb.2015.02. 069)

    2015 doi

  34. [40]

    U. I. Uggerhøj, T. N. Wistisen, J. L. Hansen, W. Lauth, an d P. Klag, Radiation collimation in a thick crystalline undulator, Eur. Phys. J. D 71, 124 (2017) ( https://doi.org/10.1140/ epjd/e2017-70720-y )

    2017

  35. [41]

    Backe, W

    H. Backe, W. Lauth, P. Klag, and Thu Nhi Tran Caliste, Pla nar channeling of 855 MeV electrons in a boron-doped (110) diamond undulator - a case s tudy, Nucl. Instrum. Meth. A 1073, 170236 (2025) ( https://doi.org/10.1016/j.nima.2025.170236)

    2025

  36. [42]

    48550/arXiv.2504.17988)

    Hartmut Backe, Jos´ e Baruchel, Simon B´ enichou, R´ ebecca Dowek, David Eon, Pierre Ever- aere, Lutz Kirste, Pascal Klag, Werner Lauth, Patrik Straˇ n ´ ak, and Thu Nhi Tran Caliste, Observation of narrow-band γ radiation from a boron-doped diamond superlattice with an 29 855...

    doi arXiv

  37. [44]

    Pavlov, A.V

    A.V. Pavlov, A.V. Korol, V.K. Ivanov, and A.V. Solov’yo v, Channeling and radiation of electrons and positrons in the diamond heterocrystals, St. Petersburg Polytechnic Uni. J.: Phys. Math. 14, 190-201 (2021) ( https://doi.org/10.18721/JPM.14414)

    2021 doi

  38. [45]

    G. B. Sushko, V. G. Bezchastnov, I. A. Solov’yov, A. V. Ko rol, W. Greiner, A. V. Solov’yov, Simulation of ultra-relativistic electrons and positrons channeling in crystals with MBN Ex- plorer. J. Comp. Phys. 252, 404 (2013) ( https://doi.org/10.1016/j.jcp.2013.06.028)

    2013 doi

  39. [46]

    G. B. Sushko, I. A. Solov’yov, A. V. Solov’yov, Modeling MesoBioNano systems with MBN Studio made easy. J. Mol. Graph. Model. 88, 247 (2019). ( https://doi.org/10.1140/epjd/ e2015-60424-9 )

    2019 doi

  40. [47]

    I. A. Solov’yov, A. V. Yakubovich, P. V. Nikolaev, I. Vol kovets, A. V. Solov’yov, MesoBioNano Explorer – A universal program for multiscale computer simu lations of complex molecular structure and dynamics. J. Comp. Phys. 33, 2412 (2012). ( https://doi.org/10.1002/jcc. 23086)

    2012 doi

  41. [48]

    A. V. Korol, G. B. Sushko, A. V. Solov’yov, All-atom rela tivistic molecular dynamics simu- lations of channeling and radiation processes in oriented c rystals. Europ. Phys. J. D 75, 107 (2021). ( https://doi.org/10.1140/epjd/s10053-021-00111-w )

    2021 doi

  42. [49]

    G. B. Sushko, A. V. Korol, and A. V. Solov’yov, Atomistic modeling of the channeling process with and without account for ionising collisions: A compara tive study, arXiv:2405.07633v2 (2025) ( https://arxiv.org/pdf/2405.07633v2)

    2025 arXiv

  43. [50]

    Picraux, L.R

    S.T. Picraux, L.R. Dawson, J.Y. Tsao, B.L. Doyle, and S. R. Lee, Structure of layered crystals studied by high energy ion beams, Nucl. Instrum. Meth. B 33, 891-897 (1988) ( https://doi. org/10.1016/0168-583X(88)90705-7 )

    1988 doi

  44. [51]

    De Salvador, M

    D. De Salvador, M. Petrovich, M. Berti, F. Romanato, E. N apolitani, A. Drigo, J. Stangl, S. Zerlauth, M. M¨ uhlberger, F. Sch¨ affler, G. Bauer, and P. C. Kelires, Lattice parameter of Si 1−x−yGexCy alloys, Phys. Rev. B 61, 13005-13013 (2000) ( https://doi.org/10.1103/ PhysRevB...

    2000

  45. [52]

    Korol, W

    A.V. Korol, W. Krause, A.V. Solov’yov, and W. Greiner, P hoton emission by ultra-relativistic positrons in crystalline undulators: the high-energy regi me, Nucl. Instrum. Meth. A 483, 455- 460 (2002) ( https://doi.org/10.1016/S0168-9002(02)00361-3 )

    2002 doi

  46. [53]

    Wojewoda, P

    T. Wojewoda, P. Achatz, L. Ort´ ega, F. Omn´ es, C. Marcen at, E. Bourgeois, X. Blase, F. Jo- mard, E. Bustarret, Doping-induced anisotropic lattice st rain in homoepitaxial heavily boron- doped diamond, Diamond Rel. Mat. 17, 1302-1306 (2008) ( https://doi.org/10.1016/j. diamo...

    2008 doi

  47. [55]

    Brunet, P

    F. Brunet, P. Germi, M. Pernet, A. Deneuville, E. Gheera ert, F. Laugier, M. Burdin, and G. Rolland, The effect of boron doping on the lattice parameter of homoepitaxial diamond films, Diamond Rel. Mat. 7, 869-873 (1998) ( https://doi.org/10.1016/S0925-9635(97) 00316-6)

    1998 doi

  48. [57]

    Morse, D

    Thu Nhi Tran Thi, J. Morse, D. Caliste, B. Fernandez, D. E on, J. H¨ artwig, C. Barbay, C. Mer-Calfati, N. Tranchant, J.C. Arnault, T.A. Lafford, J. B aruchel, Synchrotron Bragg diffraction imaging characterization of synthetic diamond c rystals for optical and electronic power ...

    2017

  49. [58]

    Thu Nhi Tran Thi, Private communication (2024)

    2024

  50. [59]

    Tsyganov, E. N. Fermilab Preprints TM-682: Some aspect s of the mechanism of a charged particle penetration through a monocrystal. & TM-684: Esti mates of Cooling and bending processes for charged particle penetration through a monoc rystal. (Fermilab, Batavia, 1976)

    1976

  51. [60]

    Backe, W

    H. Backe, W. Lauth, P. Drexler, P. Heil, P. Klag, B. Ledro it, and F. Stieleret, Design study for a 500 Mev positron beam at the Mainz Microtron MAMI, Europ. Phys. J. D 76, 150 (2022). (https://doi.org/10.1140/epjd/s10053-022-00465-9 )

    2022 doi

  52. [61]

    Backe, On planar (110) channeling of 500 MeV positron s and electrons in silicon semicon- ductor detectors, Nucl

    H. Backe, On planar (110) channeling of 500 MeV positron s and electrons in silicon semicon- ductor detectors, Nucl. Instrum. Meth. A 1059, 168998 (2024) ( https://doi.org10.1016/ 31 j.nima.2023.168998)

    2024

  53. [62]

    Pavlov, A.V

    A.V. Pavlov, A.V. Korol, V.K. Ivanov, and A.V. Solov’yo v, Channeling of electrons and positrons in straight and periodically bent diamond(110) c rystals. Eur. Phys. J. D 74, 21 (2020) ( https://doi.org/10.1140/epjd/e2019-100224-3 )

    2020 doi

  54. [63]

    A. M. Taratin, Particle Channeling in a Bent Crystal, Phys. Part. Nucl. 29, 437-462 (1998) (https://doi.org/10.1134/1.953085)

    1998 doi

  55. [64]

    Pascal Elleaume, Insertion devices for the new generat ion of synchrotron sources: A review, Rev. Sci. Instrum. , 63, 321-326 (1991) ( https://doi.org/10.1063/1.1142744)

    1991 doi

  56. [65]

    A. V. Korol, A. V., Solov’yov, W. Greiner, The influence o f the dechanneling process on the photon emission by an ultra-relativistic positron channel ing in a periodically bent crystal. J. Phys. G: Nucl. Part. Phys. 27, 95 (2001) ( https://doi.org/10.1088/0954-3899/27/1/ 307)

    2001 doi

  57. [66]

    D. F. Alferov, Yu. A. Bashmakov, P. A. Cherenkov, Radiat ion from relativistic electrons in a magnetic undulator, Sov. Phys. - Uspekhi 32, 200-227 (1989) ( https://doi.org/10.1070/ PU1989v032n03ABEH002688)

    1989

  58. [67]

    Dickers, Gennady B

    Matthew D. Dickers, Gennady B. Sushko, Andrei V. Korol, Nigel J. Mason, Felipe Fan- tuzzi, and Andrey V. Solov’yov, Dopant concentration effects on Si 1−xGex crystals for emerg- ing light-source technologies: a molecular dynamics study , Europ. Phys. J. D 78, 77 (2024) (https:/...

    2024 doi

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