Pith. sign in

REVIEW 4 major objections 7 minor 42 references

Acoustic Phonon-Induced Dephasing in Gallium Nitride Defect-Based Quantum Emitters

T0 review · 4 major / 7 minor · reviewed 2026-08-07 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read Acoustic phonons, acting through the electric fields of nearby charged defects, explain why GaN quantum emitters break the T-cubed linewidth law.

desk verdict Plausible re-interpretation of GaN dephasing data, but the key acoustic-phonon formula is missing its derivation and the paper's analytic check is off by a factor of two. read the letter →

arxiv 2506.12984 v1 pith:AVKATGSV submitted 2025-06-15 quant-ph physics.app-phphysics.optics

Yifei Geng This is my paper · ORCID
classification quant-phphysics.app-phphysics.optics PACS 78.55.Cr71.55.Eq
keywords acousticphonondephasingGaNdefectquantumemitterssingle-photonsourcesphotoluminescencelinewidthquadraticStarkeffectDebyetemperaturespectraldiffusionT-cubedlaw
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

GaN defect-based quantum emitters show a photoluminescence linewidth that broadens with temperature yet does not follow the $T^3$ law seen in other defect-rich crystals such as AlN, SiC, and hBN. This paper claims the deviation is caused by acoustic phonons modulating the electric field of nearby charged defects — the quadratic Stark effect — with GaN's unusually low Debye temperature (about 600 K) as the key: the $T^3$ law is the infinite-cutoff limit of the relevant integral, and for GaN the finite cutoff matters at accessible temperatures. Evaluated numerically with a 600 K cutoff, the model fits the measured Lorentzian linewidth almost as well as the previously published defect–$E_2$(low) optical phonon coupling model, so both acoustic and optical phonons may contribute to dephasing in GaN. The mechanism matters because dephasing limits photon indistinguishability, and the two candidate channels point to different remedies — cleaning up charged defects would help only if the acoustic Stark channel dominates.

What carries the argument

The load-bearing object is Eq. 8, the spectral-density integral $\gamma \propto \int_0^{\omega_D} d\omega\, \omega^2 n(\omega)(n(\omega)+1)$, which encodes dephasing when acoustic phonons modulate the Coulomb field of nearby charged defects (the quadratic Stark effect) in a defect-rich crystal. Its two regimes carry the argument: with the upper limit treated as infinite it yields the $T^3$ law observed in high-Debye-temperature materials such as AlN, SiC, and diamond, while with GaN's about-600 K Debye temperature as a finite cutoff it has no closed form and must be evaluated numerically, producing the observed sub-cubic deviation. It is supported by the Hamiltonian of Eq. 3, which separates a slowly fluctuating external electric field (microsecond correlation time, giving temperature-independent Gaussian spectral diffusion) from the phonon-modulated charged-defect field, $\Delta E_j^n = -\partial_\ell \partial_j V(|\mathbf{r}_0 - \mathbf{r}_n|)[u_\ell(\mathbf{r}_0) - u_\ell(\mathbf{r}_n)]$, giving temperature-dependent Lorentzian broadening; the two combine into the Voigt spectral density (a Gaussian–Lorentzian convolution) of Eq. 7, whose Lorentzian width is Eq. 8.

What would settle it

Measure the temperature-dependent Lorentzian linewidth of GaN defect emitters in high-purity, low-defect-density GaN — the experiment the authors themselves call for. The acoustic-phonon Stark model predicts that the amplitude of the temperature-dependent broadening scales with the local charged-defect density, whereas the intrinsic optical-phonon model predicts that it does not; if the broadening is unchanged between defect-rich and defect-poor samples, the central premise is refuted. Recovering the missing derivation of Eq. 8 and checking that its predicted amplitude is consistent with independently measured Stark shifts and defect densities would settle the mathematical premise directly.

Watch

Extended reading notes

Core claim

On the paper's own terms, the discovery is that the temperature-dependent broadening of GaN defect emitter emission lines — which for emitter E4 grows from 0.72 meV at 10 K to 6.82 meV at 270 K without following a $T^3$ law above roughly 120 K — is quantitatively reproduced by acoustic-phonon-modulated quadratic Stark dephasing. Acoustic phonons change the distances between the emitter and surrounding charged defects, modulating the Coulomb interaction and hence the transition energy; the resulting Lorentzian width takes the form $\gamma \propto \int_0^{\omega_D} d\omega\, \omega^2 n(\omega)(n(\omega)+1)$, which reduces to $(\pi^2/6)(k_B T/\hbar)^3$ only when the Debye cutoff is approximated as infinite. Because GaN's Debye temperature is only about 600 K, the finite upper limit forces numerical evaluation, yielding a curve that tracks the measured linewidth with accuracy comparable to the earlier defect–$E_2$(low) optical phonon coupling model. The paper concludes that acoustic phonons are a genuine dephasing channel in GaN defect emitters, that both acoustic and optical phonons can contribute, and that the acoustic channel depends on the local charged-defect environment while the optical channel is intrinsic to the emitter.

Load-bearing premise

The whole explanation rests on Eq. 8: that the Lorentzian linewidth equals a fitted constant times $\int_0^{\omega_D} d\omega\, \omega^2 n(\omega)(n(\omega)+1)$ with a Debye cutoff at 600 K, a formula whose derivation is deferred to a Supplementary Material that does not accompany the arXiv submission, with the overall amplitude also fit to the data. If that integral's form, the Debye cutoff approximation, or the fitted scale is wrong, the apparent agreement in Fig. 4 would be coincidental rather than explanatory.

Editorial extensions

If this is right

  • The open question of why low-energy acoustic phonons apparently do not dephase GaN defect emitters is resolved: they do contribute, and GaN's low Debye temperature merely hides their signature by breaking the $T^3$ scaling.
  • Because the two phonon channels produce nearly identical temperature-dependent linewidths, telling them apart requires studying emitters in high-purity, low-defect-density GaN, as the paper itself concludes.
  • The $T^3$ law is a low-temperature limit valid below roughly 120 K for GaN; above that, the finite Debye cutoff must be included, so $T^3$ fits are expected to fail in any defect emitter hosted in a material with a comparably low Debye temperature.
  • Since the Gaussian spectral-diffusion component is temperature-independent (0.72 meV) and the Lorentzian phonon component shrinks at low temperature, highest photon indistinguishability is obtained by operating GaN emitters at low temperature, where phonon broadening is suppressed.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Editorial inference: the two mechanisms could be separated by engineering the local charge environment — comparing the same emitter's temperature broadening before and after electron irradiation, or under an applied gate voltage — since the acoustic Stark amplitude should track charged-defect density while the optical phonon amplitude should not.
  • Editorial inference: the finite-Debye-temperature argument generalizes to any defect emitter in a low-Debye-temperature host; re-examining published linewidth data for emitters in ZnO, GaAs, InP, or organic crystals for sub-cubic deviations from $T^3$ would test the mechanism cheaply.
  • Editorial inference: the mathematical core of the model is currently asserted rather than demonstrated, because the derivation of Eq. 8 is deferred to a Supplementary Material absent from the arXiv submission; supplying and checking that derivation, and comparing the fitted amplitude against independent measurements of Stark shifts and defect densities, is the immediate next step before the mechan
Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 7 minor

Summary. The paper addresses the temperature dependence of the photoluminescence (PL) linewidth of defect-based quantum emitters in GaN. The authors fit Voigt profiles to temperature-dependent spectra (reproduced from previous work) and extract a Gaussian component attributed to spectral diffusion and a Lorentzian component attributed to phonon-induced dephasing. They observe that the Lorentzian linewidth does not follow the common T^3 law and propose that acoustic phonon modulation of the quadratic Stark effect in defect-rich GaN explains the deviation, provided one uses a finite Debye temperature (about 600 K). The central expression, Eq. (8), gives a Lorentzian width proportional to the integral of omega^2 n(omega)(n(omega)+1) up to the Debye frequency. The paper argues that this expression reproduces the measured linewidth with accuracy comparable to the earlier optical-phonon model of Ref. [14], and it explicitly acknowledges that the data cannot distinguish the acoustic and optical mechanisms.

Significance. If the derivation of Eq. (8) is sound, the paper would establish a concrete acoustic-phonon dephasing mechanism for GaN defect emitters and provide a physically plausible explanation for the observed deviation from T^3 scaling. The use of a finite Debye temperature rather than an infinite cutoff is a sensible idea, and the paper is honest in stating that the acoustic and optical models are empirically indistinguishable with the present data. The manuscript also benefits from a clean separation of the Gaussian and Lorentzian contributions via Voigt fitting. However, the significance is substantially limited by three issues: the central formula is underived (the referenced Supplementary Material is missing from the arXiv posting), the one analytic check in the paper is off by a factor of two, and the comparison with data lacks error bars, fit statistics, and the reported value of the fitted coupling amplitude. These problems must be resolved before the acoustic-phonon model can be assessed as a reliable explanation.

major comments (4)
  1. [Section 3 (phonon model), Eq. (8)] Equation (8) is the load-bearing result, but its derivation is not present in the manuscript. The text says "see the Supplementary Material for the derivation," and the arXiv submission contains no Supplementary Material. Because the entire temperature dependence of the fit is governed by this integral, the reader cannot verify that the kernel omega^2 n(omega)(n(omega)+1), the Debye cutoff, and the quadratic Stark mechanism actually follow from the Hamiltonian in Eq. (3). The derivation must be provided, either in the main text or in a supplement that is included with the submission.
  2. [Eq. (8) and the T^3 limit] The stated analytic evaluation is incorrect by a factor of two. Direct integration gives \int_0^\infty d\omega \,\omega^2 n(\omega)(n(\omega)+1) = (\pi^2/3)(k_B T/\hbar)^3, not (\pi^2/6)(k_B T/\hbar)^3 as claimed in the text. Since the prefactor in Eq. (8) is fitted, this constant error is absorbed into the fitted amplitude and does not by itself invalidate the visual fit in Fig. 4, but it means the statement about a universal T^3 coefficient is wrong. The formula must be corrected and checked against the derivation supplied in response to the previous comment.
  3. [Fig. 4 and model comparison] The comparison between the acoustic-phonon model and the optical-phonon model lacks the information needed to judge the claim of comparable accuracy. The linewidth data in Fig. 4 have no error bars, no uncertainties are given for the extracted linewidths, the fitted acoustic coupling amplitude (the proportionality constant in Eq. (8)) is not reported, and no goodness-of-fit statistics are provided. Please include the fitted parameter values with uncertainties and quantify the fit quality for both models, for example with reduced chi-square or R^2 values.
  4. [Fig. 4 and Eq. (2)] It is not clear what quantity the blue data points in Fig. 4 represent: the total Voigt FWHM f_V, the Lorentzian component f_L, or the total linewidth after deconvolution. Equation (8) predicts the Lorentzian width, so if the plotted quantity is f_V, the model comparison must account for the Gaussian contribution f_G = 0.72 meV through the Voigt combination in Eq. (2). The text describes Fig. 4 as showing "temperature-dependent linewidth data" but does not state whether this is f_L or f_V; please specify the quantity and ensure both models are compared on the same basis.
minor comments (7)
  1. [Eq. (3)] The Hamiltonian in Eq. (3) is difficult to parse because the two lines defining H_0 and H' are not clearly separated; a typesetting fix would improve readability.
  2. [Eq. (5)] The phrase "acoustic photon amplitude" should be "acoustic phonon amplitude."
  3. [Eq. (6)] The time-ordering operator appears as "TTT" in the equation; this is a formatting artifact that should be corrected to \mathcal{T}.
  4. [Paragraph after Eq. (8)] The integral symbols in the sentence following Eq. (8) are garbled ("+\inftyR 0"); the typesetting should be fixed.
  5. [Abstract and Introduction] The experimental spectra and data points in Figs. 1 and 2 are reproduced from Ref. [14], but the abstract and introduction describe the findings as "our experimental findings" without making the data provenance explicit. The new contribution in this manuscript is the acoustic-phonon model, and the text should state this clearly.
  6. [References] The reference list contains many self-citations (Refs. [2], [3], [4], [7], [8], [9], [14], [16], [21]); citing more independent work on GaN defect emitters would strengthen the context.
  7. [Fig. 4] The conditions of the T^3 fit (temperature range, fitted coefficient) are not specified; please state them so the comparison is reproducible.

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity: Eq. 8 is an independently motivated spectral kernel fitted only in overall amplitude; missing derivation and factor-of-two check are correctness risks, not circular reductions.

full rationale

No load-bearing step reduces to its own input. The model's temperature dependence is carried by the Bose-Einstein occupation factors and the finite Debye cutoff in Eq. 8, while the measured PL linewidths of Fig. 4 are the target data, not an ingredient of the kernel. The free proportionality constant sets only the vertical scale, so the comparison in Fig. 4 tests the functional form against independently measured linewidths (originally reported in Ref. 14). Reuse of the author's earlier PL data and of the Ref. 14 optical-phonon curve is self-citation, but the acoustic-phonon claim is not derived from those citations; the comparison is direct. The paper explicitly notes both mechanisms explain the data with comparable accuracy, which is an underdetermination caveat rather than a circular argument. Two limitation passages are flagged but are not circularity: the derivation of Eq. 8 is deferred by the sentence 'see the Supplementary Material for the derivation' near Eq. 6, and the Supplementary Material is absent from the arXiv posting; and the stated analytic T^3 coefficient, '∫_0^∞ dω ω^2 n(ω)(n(ω)+1) = π^2/6 (k_BT/ħ)^3', is a factor of two smaller than the direct evaluation π^2/3. These are completeness and correctness concerns, not reductions of the conclusion to its inputs. Score 0 per Rule 3: the model is self-contained against an external data set and external literature values of the GaN Debye temperature.

Assumptions & free parameters 2 free parameters · 4 assumptions · 0 invented entities

The model rests on assumptions about the phonon density of states and the specific form of the phonon-Stark coupling. The missing derivation of Eq. 8 is a significant gap that prevents full auditing of the model's axioms. No fundamentally new entities are introduced.

free parameters (2)
  • Acoustic phonon coupling amplitude = Not reported
    The Lorentzian width in Eq. 8 is proportional to the integral times an unspecified prefactor. The fit to the measured f_L(T) determines this amplitude, but its value is not given in the paper.
  • Gaussian FWHM f_G (spectral diffusion) = 0.72 meV
    Extracted by Voigt fitting the 10 K PL spectrum and assumed constant across temperature; uncertainty in this extraction is not reported.
assumptions (4)
  • domain assumption The spectral density S(omega) is a Voigt convolution of a Gaussian (spectral diffusion) and a Lorentzian (phonon dephasing), as in Eq. 7.
    Invoked in Section IV; assumes the two dephasing mechanisms are independent and additive. The derivation is delegated to the missing Supplementary.
  • domain assumption The Lorentzian width gamma is proportional to the integral from 0 to omega_D of domega omega^2 n(omega)(n(omega)+1), Eq. 8.
    This is the core acoustic-phonon model; the paper provides no derivation in the main text and the prefactor is fit to data.
  • domain assumption Acoustic phonons modulate the relative positions of nearby charged defects, producing a quadratic Stark shift, Eq. 4.
    Assumes a defect-rich environment with charged defects near the emitter and that their displacement couples to the emitter energy as described.
  • domain assumption The Debye model with a single cutoff at theta_D = 600 K describes the acoustic phonon density of states for GaN.
    Used to set the upper integration limit in Eq. 8; deviations from the Debye model could change the temperature dependence of the fit.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Acoustic Phonon-Induced Dephasing in Gallium Nitride Defect-Based Quantum Emitters." pith.science (2026). https://pith.science/paper/AVKATGSV

@misc{pith2026250612984,
  author       = {Pith},
  title        = {Pith review of: Acoustic Phonon-Induced Dephasing in Gallium Nitride Defect-Based Quantum Emitters},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/AVKATGSV}},
  note         = {Machine review of arXiv:2506.12984}
}
read the original abstract

GaN defect based quantum emitters have recently gained attention as promising single photon sources for quantum information applications. However, dephasing processes, manifested as photoluminescence (PL) linewidth broadening, pose a limitation to photon indistinguishability. In this study, we use a custom built confocal scanning microscope to examine the temperature dependent PL spectra of GaN defect quantum emitters integrated with solid immersion lenses, with the goal of elucidating their dephasing mechanisms. Our experimental findings show that at low temperatures, the PL lineshape exhibits a Gaussian profile with a constant, temperature independent linewidth, consistent with spectral diffusion. As the temperature increases, the PL lineshape evolves into a Lorentzian, and the temperature dependent linewidth deviates from the common T3 law. Considering the Debye temperature of GaN (about 600 K), the experimentally observed temperature dependent linewidth can be modeled by the quadratic Stark effect modulated by acoustic phonons in defect rich crystals. Furthermore, this model exhibits a level of accuracy comparable to that of the defect-E2(low) optical phonon coupling model previously reported in the literature. Our work reveals the mechanism of acoustic phonon induced dephasing in GaN defect emitters and demonstrates that both acoustic and optical phonons can contribute to their dephasing.

Figures

Figures reproduced from arXiv: 2506.12984 by the authors.

Figure 1
Figure 1. FIG. 1. (a) Schematic layout of the custom-built confocal scanning microscope, equipped with a spectrometer and an HBT interferometer. [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. FIG. 2. (a) Temperature-dependent PL spectra of emitter E4 from 10 [PITH_FULL_IMAGE:figures/full_fig_p003_2.png] view at source ↗
Figure 3
Figure 3. FIG. 3. (a) Ideal two-level system with ground state [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗
Figures from the paper (1 more)
Figure 4
Figure 4. Figure 4: FIG. 4. The temperature-dependent linewidth data (blue dots) and [PITH_FULL_IMAGE:figures/full_fig_p005_4.png]

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

42 extracted references · 37 canonical work pages

  1. [14]

    Zhu , author X

    author author S. Zhu , author X. Shan , author R. Lin , author P. Qiu , author Z. Wang , author X. Lu , author L. Yan , author X. Cui , author G. Zhang , \ and\ author P. Tian ,\ title title Characteristics of gan-on-si green micro-led for wide color gamut display and high-speed visible light communication , \ @noop journal journal ACS Photonics \ volume ...

    work page 2022

  2. [1]

    merlin.mbs aapmrev4-1.bst 2010-07-25 4.21a (PWD, AO, DPC) hacked

    FUNCTION id.bst "merlin.mbs aapmrev4-1.bst 2010-07-25 4.21a (PWD, AO, DPC) hacked" ENTRY address archive archivePrefix author bookaddress booktitle chapter collaboration doi edition editor eid eprint howpublished institution isbn issn journal key language month note number organization pages primaryClass publisher school SLACcitation series title translat...

    2010

  3. [2]

    merlin.mbs aipauth4-1.bst 2010-07-25 4.21a (PWD, AO, DPC) hacked

    FUNCTION id.bst "merlin.mbs aipauth4-1.bst 2010-07-25 4.21a (PWD, AO, DPC) hacked" ENTRY address archive archivePrefix author bookaddress booktitle chapter collaboration doi edition editor eid eprint howpublished institution isbn issn journal key language month note number organization pages primaryClass publisher school SLACcitation series title translat...

    2010

  4. [3]

    merlin.mbs aipnum4-1.bst 2010-07-25 4.21a (PWD, AO, DPC) hacked

    FUNCTION id.bst "merlin.mbs aipnum4-1.bst 2010-07-25 4.21a (PWD, AO, DPC) hacked" ENTRY address archive archivePrefix author bookaddress booktitle chapter collaboration doi edition editor eid eprint howpublished institution isbn issn journal key language month note number organization pages primaryClass publisher school SLACcitation series title translati...

    2010

  5. [4]

    Aharonovich , author D

    author author I. Aharonovich , author D. Englund , \ and\ author M. Toth ,\ title title Solid-state single-photon emitters , \ @noop journal journal Nature photonics \ volume 10 ,\ pages 631--641 ( year 2016 ) NoStop

    work page 2016

  6. [5]

    Geng ,\ title Defect Quantum Emitters in Gallium Nitride ,\ @noop Ph.D

    author author Y. Geng ,\ title Defect Quantum Emitters in Gallium Nitride ,\ @noop Ph.D. thesis ,\ school Cornell University ( year 2024 ) NoStop

    work page 2024

  7. [6]

    Luo , author Y

    author author J. Luo , author Y. Geng , author F. Rana , \ and\ author G. Fuchs ,\ title title Gan quantum emitters: basic physics, spin structure, and optically detected magnetic resonance (odmr) , \ in\ @noop booktitle Gallium Nitride Materials and Devices XX \ ( organization SPIE ,\ year 2025 )\ p.\ pages PC1336605 NoStop

    work page 2025

  8. [7]

    Decoherence by Optical Phonons in GaN Defect Single-Photon Emitters

    author author Y. Geng , author J. Luo , author L. van Deurzen , author D. Jena , author G. D. \ Fuchs , author F. Rana , et al. ,\ title title Decoherence by optical phonons in gan defect single-photon emitters , \ @noop journal journal arXiv preprint arXiv:2206.12636 \ ( year 2022 a ) NoStop

    work page Pith review arXiv 2022

Show all 42 references
  1. [8]

    Yi-Fei , author W

    author author G. Yi-Fei , author W. Zhu-Ning , author M. Yao-Guang , \ and\ author G. Fei ,\ title title Topological surface plasmon. polaritons , \ @noop journal journal Acta Physica Sinica \ volume 68 ( year 2019 ) NoStop

    2019

  2. [9]

    author author A. M. \ Berhane , author K.-Y. \ Jeong , author Z. Bodrog , author S. Fiedler , author T. Schr \"o der , author N. V. \ Trivi \ n o , author T. Palacios , author A. Gali , author M. Toth , author D. Englund , et al. ,\ title title Bright room-temperature single-p...

    2017

  3. [10]

    Geng , author J

    author author Y. Geng , author J. Luo , author L. van Deurzen , author D. Jena , author G. D. \ Fuchs , author F. Rana , et al. ,\ title title Temperature dependence of the emission spectrum of gan defect single-photon emitters , \ @noop journal journal arXiv e-prints \ ,\ pag...

    2022

  4. [11]

    Geng , author J

    author author Y. Geng , author J. Luo , author L. van Deurzen , author D. Jena , author G. Fuchs , \ and\ author F. Rana ,\ title title Temperature dependence of spectral emission from gan defect quantum emitters , \ @noop journal journal Bulletin of the American Physical Soci...

    2022

  5. [12]

    Geng ,\ title title Temperature dependent emission polarization of gan defect quantum emitters , \ @noop journal journal arXiv preprint arXiv:2504.18548 \ ( year 2025 ) NoStop

    author author Y. Geng ,\ title title Temperature dependent emission polarization of gan defect quantum emitters , \ @noop journal journal arXiv preprint arXiv:2504.18548 \ ( year 2025 ) NoStop

    2025 arXiv

  6. [13]

    author author H. S. \ Wasisto , author J. D. \ Prades , author J. G \"u link , \ and\ author A. Waag ,\ title title Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of gan nano-and micro-leds , \ @noop journal journal Applied Physics Reviews \...

    2019

  7. [15]

    \ Ma \ and\ author Z.-H

    author author C.-T. \ Ma \ and\ author Z.-H. \ Gu ,\ title title Review of gan hemt applications in power converters over 500 w , \ @noop journal journal Electronics \ volume 8 ,\ pages 1401 ( year 2019 ) NoStop

    2019

  8. [16]

    author author K. J. \ Chen , author O. H \"a berlen , author A. Lidow , author C. lin Tsai , author T. Ueda , author Y. Uemoto , \ and\ author Y. Wu ,\ title title Gan-on-si power technology: Devices and applications , \ @noop journal journal IEEE Transactions on Electron Devi...

    2017

  9. [17]

    Geng , author J

    author author Y. Geng , author J. Luo , author L. van Deurzen , author H. Xing , author D. Jena , author G. D. \ Fuchs , \ and\ author F. Rana ,\ title title Dephasing by optical phonons in gan defect single-photon emitters , \ @noop journal journal Scientific Reports \ volume...

    2023

  10. [18]

    author author A. M. \ Berhane , author K.-Y. \ Jeong , author C. Bradac , author M. Walsh , author D. Englund , author M. Toth , \ and\ author I. Aharonovich ,\ title title Photophysics of gan single-photon emitters in the visible spectral range , \ @noop journal journal Physi...

    2018

  11. [19]

    Geng , author D

    author author Y. Geng , author D. Jena , author G. D. \ Fuchs , author W. R. \ Zipfel , \ and\ author F. Rana ,\ title title Optical dipole structure and orientation of gan defect single-photon emitters , \ @noop journal journal ACS Photonics \ volume 10 ,\ pages 3723--3729 ( ...

    2023

  12. [20]

    Luo , author Y

    author author J. Luo , author Y. Geng , author F. Rana , \ and\ author G. D. \ Fuchs ,\ title title Room temperature optically detected magnetic resonance of single spins in gan , \ @noop journal journal Nature Materials \ volume 23 ,\ pages 512--518 ( year 2024 a ) NoStop

    2024

  13. [21]

    Luo , author Y

    author author J. Luo , author Y. Geng , author F. Rana , \ and\ author G. Fuchs ,\ title title Room temperature optically detected magnetic resonance in single spins hosted in gan , \ @noop journal journal Bulletin of the American Physical Society \ ( year 2024 b ) NoStop

    2024

  14. [22]

    Luo , author Y

    author author J. Luo , author Y. Geng , author R. Farhan , author G. Fuchs , et al. ,\ title title Data and scripts from: Room temperature optically detected magnetic resonance of single spins in gan , \ @noop journal journal Cornell eCommons \ ( year 2024 c ) NoStop

    2024

  15. [23]

    Luo , author Y

    author author J. Luo , author Y. Geng , author F. Rana , \ and\ author G. D. \ Fuchs ,\ title title Room-temperature optically detected magnetic resonance of gan defect single-photon emitters , \ in\ @noop booktitle CLEO: Fundamental Science \ ( organization Optica Publishing ...

    2023

  16. [24]

    Geng \ and\ author K

    author author Y. Geng \ and\ author K. Nomoto ,\ title title Ultrafast spectral diffusion of gan defect single photon emitters , \ @noop journal journal Applied Physics Letters \ volume 123 ( year 2023 ) NoStop

    2023

  17. [25]

    Yuan , author Y

    author author J. Yuan , author Y. Hou , author Z. Yang , author F. Chen , \ and\ author Q. Li ,\ title title Gan as a material platform for single-photon emitters: Insights from ab initio study , \ @noop journal journal Advanced Optical Materials \ volume 11 ,\ pages 2202158 (...

    2023

  18. [26]

    Santori , author D

    author author C. Santori , author D. Fattal , author J. Vu c kovi \'c , author G. S. \ Solomon , \ and\ author Y. Yamamoto ,\ title title Indistinguishable photons from a single-photon device , \ @noop journal journal nature \ volume 419 ,\ pages 594--597 ( year 2002 ) NoStop

    2002

  19. [27]

    Xue , author H

    author author Y. Xue , author H. Wang , author N. Xie , author Q. Yang , author F. Xu , author B. Shen , author J.-j. \ Shi , author D. Jiang , author X. Dou , author T. Yu , et al. ,\ title title Single-photon emission from point defects in aluminum nitride films , \ @noop jo...

    2020

  20. [28]

    Sontheimer , author M

    author author B. Sontheimer , author M. Braun , author N. Nikolay , author N. Sadzak , author I. Aharonovich , \ and\ author O. Benson ,\ title title Photodynamics of quantum emitters in hexagonal boron nitride revealed by low-temperature spectroscopy , \ @noop journal journal...

    2017

  21. [29]

    Lienhard , author T

    author author B. Lienhard , author T. Schr \"o der , author S. Mouradian , author F. Dolde , author T. T. \ Tran , author I. Aharonovich , \ and\ author D. Englund ,\ title title Bright and photostable single-photon emitter in silicon carbide , \ @noop journal journal Optica \...

    2016

  22. [30]

    Hizhnyakov \ and\ author P

    author author V. Hizhnyakov \ and\ author P. Reineker ,\ title title Optical dephasing in defect-rich crystals , \ @noop journal journal The Journal of chemical physics \ volume 111 ,\ pages 8131--8135 ( year 1999 ) NoStop

    1999

  23. [31]

    author author K.-M. C. \ Fu , author C. Santori , author P. E. \ Barclay , author L. J. \ Rogers , author N. B. \ Manson , \ and\ author R. G. \ Beausoleil ,\ title title Observation of the dynamic jahn-teller effect in the excited states of nitrogen-vacancy centers in diamond...

    2009

  24. [32]

    author author T. A. \ Abtew , author Y. Sun , author B.-C. \ Shih , author P. Dev , author S. Zhang , \ and\ author P. Zhang ,\ title title Dynamic jahn-teller effect in the nv-center in diamond , \ @noop journal journal Physical review letters \ volume 107 ,\ pages 146403 ( y...

    2011

  25. [33]

    author author R. Silsbee ,\ title title Thermal broadening of the m \"o ssbauer line and of narrow-line electronic spectra in solids , \ @noop journal journal Physical Review \ volume 128 ,\ pages 1726 ( year 1962 ) NoStop

    1962

  26. [34]

    Hizhnyakov , author H

    author author V. Hizhnyakov , author H. Kaasik , \ and\ author I. Sildos ,\ title title Zero-phonon lines: the effect of a strong softening of elastic springs in the excited state , \ @noop journal journal physica status solidi (b) \ volume 234 ,\ pages 644--653 ( year 2002 ) NoStop

    2002

  27. [35]

    title title Aln: Basic parameters for wurtzite crystal structure , \ @noop journal journal https://www.ioffe.ru/SVA/NSM/Semicond/AlN/basic.html \ note Accessed: 2025-05-11 NoStop

    2025

  28. [36]

    title title Sic: Thermal properties and basic parameters , \ @noop journal journal https://www.ioffe.ru/SVA/NSM/Semicond/SiC/thermal.html \ note Accessed: 2025-05-11 NoStop

    2025

  29. [37]

    Schoening \ and\ author L

    author author F. Schoening \ and\ author L. Vermeulen ,\ title title X-ray measurement of the debye temperature for diamond at low temperatures , \ @noop journal journal Solid State Communications \ volume 7 ,\ pages 15--18 ( year 1969 ) NoStop

    1969

  30. [38]

    Mukherjee \ and\ author A

    author author B. Mukherjee \ and\ author A. Boyle ,\ title title On the debye characteristic temperature of diamond , \ @noop journal journal physica status solidi (b) \ volume 22 ,\ pages K131--K134 ( year 1967 ) NoStop

    1967

  31. [39]

    title title Gan: Basic parameters for wurtzite crystal structure , \ @noop journal journal https://www.ioffe.ru/SVA/NSM/Semicond/GaN/basic.html \ note Accessed: 2025-05-11 NoStop

    2025

  32. [40]

    Chen , author J

    author author X. Chen , author J. Liang , author Y. Xu , author T. Xu , author P. Jiang , author Y. Yu , \ and\ author K. Lu ,\ title title Structure and debye temperature of wurtzite gan , \ @noop journal journal Modern physics letters B \ volume 13 ,\ pages 285--290 ( year 1...

    1999

  33. [41]

    merlin.mbs apsrev4-1.bst 2010-07-25 4.21a (PWD, AO, DPC) hacked

    FUNCTION id.bst "merlin.mbs apsrev4-1.bst 2010-07-25 4.21a (PWD, AO, DPC) hacked" ENTRY address archive archivePrefix author bookaddress booktitle chapter collaboration doi edition editor eid eprint howpublished institution isbn issn journal key language month note number orga...

    2010

  34. [42]

    merlin.mbs apsrmp4-1.bst 2010-07-25 4.21a (PWD, AO, DPC) hacked

    FUNCTION id.bst "merlin.mbs apsrmp4-1.bst 2010-07-25 4.21a (PWD, AO, DPC) hacked" ENTRY address archive archivePrefix author bookaddress booktitle chapter collaboration doi edition editor eid eprint howpublished institution isbn issn journal key language month note number orga...

    2010

Pith tools

Reviewed August 7, 2026 · model on record in the stance chip above.