arxiv: 2605.04854 · v1 · submitted 2026-05-06 · ⚛️ physics.optics · cond-mat.mtrl-sci

Recognition: unknown

Emergence of Localized Surface Plasmons in Unpatterned Hyperdoped Polycrystalline Silicon

Mohamad Bahsoun , Jesse Groenen , Gonzague Agez , S\'ebastien Jouli\'e , C\'ecile Marcelot , Robin Cours , S\'ebastien Kerdiles , Mathieu Opprecht

show 2 more authors

Caroline Bonafos Jean-Marie Poumirol

Authors on Pith no claims yet

Pith reviewed 2026-05-08 15:56 UTC · model grok-4.3

classification ⚛️ physics.optics cond-mat.mtrl-sci

keywords localized surface plasmonshyperdoped polycrystalline silicongrain boundariesmid-infraredunpatterned filmsplasmonicssemiconductor interfaces

0 comments

The pith

Unpatterned hyperdoped polycrystalline silicon films support mid-infrared localized surface plasmons through grain boundaries.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

This paper establishes that localized surface plasmon resonances in the mid-infrared can arise in unpatterned polysilicon films made of 5-50 nm grains. The resonances form at naturally occurring metal-dielectric interfaces along the grain boundaries after hyperdoping and specific annealing. A sympathetic reader would care because the approach removes the requirement for precise nanoscale patterning, allowing plasmonic effects to appear in materials already used in microelectronics and photovoltaics. The authors further claim the mechanism is universal for any doped semiconductor that maintains nanometric grain sizes.

Core claim

Hyperdoped polysilicon layers with nanometric grains exhibit tunable mid-infrared light-matter interactions. These properties originate from metal-dielectric interfaces at grain boundaries that support localized surface plasmon resonances, as shown by electron microscopy, infrared spectroscopy, and finite-difference time-domain simulations. The result holds for any doped semiconductor system provided the grain size stays in the nanometric range, independent of the synthesis method.

What carries the argument

Naturally formed metal-dielectric interfaces at grain boundaries in hyperdoped nanometric-grain polysilicon that support localized surface plasmon resonances.

If this is right

Mid-infrared plasmonic responses become possible without any external nanoscale patterning.
Resonance frequency can be tuned across the mid-infrared by adjusting hyperdoping and annealing conditions.
The films remain fully compatible with standard microelectronic and photovoltaic fabrication flows.
The same grain-boundary mechanism should appear in other polycrystalline doped semiconductors with nanometric grains.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

Grain-size control during deposition could become a design variable for infrared plasmonic devices instead of lithographic patterning.
Unexpected optical losses observed in polycrystalline semiconductor layers may partly trace to these grain-boundary resonances.
The approach invites tests in other wavelength ranges by selecting semiconductors whose plasma frequency matches the target band.

Load-bearing premise

The measured mid-infrared optical features are specifically localized surface plasmon resonances supported by grain-boundary metal-dielectric interfaces rather than other absorption or scattering mechanisms.

What would settle it

If single-crystal hyperdoped silicon of the same doping level shows no comparable mid-IR absorption features, or if electrodynamic simulations without explicit grain-boundary interfaces fail to reproduce the measured spectra.

Figures

Figures reproduced from arXiv: 2605.04854 by Caroline Bonafos, C\'ecile Marcelot, Gonzague Agez, Jean-Marie Poumirol, Jesse Groenen, Mathieu Opprecht, Mohamad Bahsoun, Robin Cours, S\'ebastien Jouli\'e, S\'ebastien Kerdiles.

**Figure 1.** Figure 1: Microstructural evolution at the melting threshold. High Resolution Transmission Electron Microscopy (HRTEM) images in cross-section of samples D1 and D2 after LTA: before Full Melt (FM)(a) and (d), at FM (b) and (e),(f), after FM (c) and (g). In inset, associated Fast Fourier Transforms of the images. The laser energy densities at FM for D1 and D2 are given in Table S1(SI). For the two doses, the hyperdop… view at source ↗

**Figure 2.** Figure 2: Orientation maps and grain-size distributions of polysilicon layers. ACOM images (orientation maps) of D1 ((a),(c)) and D2 ((b), (d)) annealed beyond the FM threshold, in cross-section (XS) and plan-view (PV); (e), (f), (g) and (h) associated size-distributions. The hyperdoped polycrystalline layer consists of randomly oriented nanograins with sizes ranging between 5 and 50 nm for both D1 and D2. nanofabri… view at source ↗

**Figure 3.** Figure 3: Experimental optical response of hyper-doped Si layers. Normalized transmittance measured for D1 (a) and D2 (b). Continuous lines, measured on unpatterned hyper-doped Si layers below full melt, at full melt and beyond full melt. Dashed lines, simulated using model described in the text. For samples annealed below FM, the normalized transmittance remains close to unity at high frequencies and decreases mar… view at source ↗

**Figure 4.** Figure 4: FDTD-calculated transmission for doped Si antenna arrays. a. FDTD calculated normalized transmission for doped Si quadratic antenna in infinite square array, with dimension of a =15 nm, b = 15 nm, c = 23 nm with carrier density N=1×1021cm−3 and scattering time τ = 3.4 × 10−15s. Antennas are separated by a variable thickness d (from 0 nm to 15 nm) of amorphous Si and deposited on SiO2. Insert: schematic co… view at source ↗

read the original abstract

The ability to engineer localized surface plasmon resonances at large scale usually relies on precise nanoscale patterning. Here, we demonstrate that mid-infrared plasmonic responses can instead emerge in unpatterned polysilicon films composed of nanometric (5-50 nm) grains, challenging established design paradigms and eliminating the need for external nanostructuring. Using tailored out-of-equilibrium annealing conditions, we show that hyperdoped polysilicon layers exhibit enhanced light-matter interactions that can be tuned across the mid-infrared range. By combining advanced electron microscopy, infrared spectroscopy and finite-difference time-domain electrodynamic simulations, we demonstrate that these remarkable optical properties originate from naturally formed metal-dielectric interfaces at grain boundaries, which support localized surface plasmon resonances. Importantly, this result is universal and can be extended to any doped semiconductor system, regardless of the synthesis technique, provided that the grain size remains in the nanometric range. This work opens up a new field in plasmonics centered on polycrystalline semiconductors, paving the way for cost-effective systems that are fully compatible with microelectronic and photovoltaic technologies, and capable of significantly reshaping light-matter interactions in the infrared range.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Desk Editor's Note private letter to a colleague

The paper reports tunable mid-IR absorption in unpatterned hyperdoped poly-Si films and attributes it to grain-boundary LSPRs, but the evidence does not yet rule out simpler absorption mechanisms.

read the letter

The main thing to know is that the authors observe mid-IR optical features in unpatterned hyperdoped polycrystalline silicon and tie them to localized surface plasmons at natural grain boundaries formed during annealing. This is positioned as a route to scalable plasmonics without lithography, which is the core novelty if it holds up. They combine TEM grain-size measurements, FTIR spectra showing tunable resonances, and FDTD simulations that model the boundaries as metallic interfaces to match the data. That experimental workflow is straightforward and relevant for silicon-compatible IR applications. The claim that the effect is universal to any nanometric-grain doped semiconductor is stated but rests on this single system. The softer part is the mechanism assignment. The simulations reproduce the spectra when boundaries are treated as plasmonic, yet there is no quantitative comparison showing that a homogeneous Drude model or effective-medium approach without explicit boundaries fits worse. Controls with larger-grain or single-crystal hyperdoped silicon are not described, so the grain-size dependence is not isolated as cleanly as needed. This leaves room for alternative explanations like free-carrier absorption or defect states. The work is aimed at researchers in silicon photonics, mid-IR sensing, and plasmonics who want fabrication-friendly approaches. A reader would get practical value from the annealing conditions and the simulation setup, even while wanting tighter exclusion of other models. It deserves peer review because the observation is new and the methods are standard; referees can push for the missing controls and model comparisons without the paper being fundamentally flawed.

Referee Report

3 major / 2 minor

Summary. The paper claims that mid-infrared localized surface plasmon resonances (LSPRs) emerge in unpatterned hyperdoped polycrystalline silicon films with nanometric (5-50 nm) grains, arising from naturally formed metal-dielectric interfaces at grain boundaries rather than requiring external patterning. This is supported by transmission electron microscopy for grain-size statistics, FTIR spectroscopy showing tunable mid-IR optical features, and FDTD electrodynamic simulations that reproduce the resonances when grain boundaries are modeled as metallic. The work asserts that the effect is universal to any doped semiconductor with nanometric grains and opens a new field in polycrystalline plasmonics compatible with microelectronics and photovoltaics.

Significance. If the central interpretation holds, the result would be significant for plasmonics and nanophotonics by showing that large-scale mid-IR light-matter interactions can be achieved without nanofabrication in polycrystalline semiconductors, potentially enabling cost-effective, CMOS-compatible devices. The multi-technique approach (microscopy + spectroscopy + simulations) is a strength, and the absence of free parameters in the core claim (grain boundaries as the origin) is noteworthy if the model uniqueness can be established.

major comments (3)

[FDTD simulations and optical modeling section] The attribution of the mid-IR absorption features specifically to grain-boundary LSPRs requires demonstrating that this model is uniquely favored. However, no quantitative model-comparison (e.g., chi-squared or residual analysis) is provided showing that a homogeneous Drude model or effective-medium approximation without explicit metallic boundaries fails to fit the FTIR data at comparable quality. This is load-bearing for the central claim.
[Experimental results and FTIR spectroscopy section] Control experiments isolating the grain-size dependence are absent. Spectra from larger-grain or single-crystal hyperdoped Si samples under identical hyperdoping conditions would be needed to confirm that the tunable mid-IR features disappear or shift when nanometric grains are not present.
[Discussion and conclusions] The universality statement (that the result extends to any doped semiconductor with nanometric grains regardless of synthesis technique) is asserted from the polysilicon case alone. No additional material systems, theoretical scaling arguments, or grain-size threshold analysis are provided to support generalization beyond the specific hyperdoped polysilicon films studied.

minor comments (2)

[Abstract] The abstract and introduction would benefit from explicit mention of the spectral range and peak positions observed in FTIR to allow readers to assess the mid-IR tuning claim without referring to figures.
[Results section] Error bars or uncertainty quantification on the FTIR spectra and grain-size distributions from TEM would improve the rigor of the experimental claims.

Simulated Author's Rebuttal

3 responses · 0 unresolved

We thank the referee for the constructive and detailed report. We address each major comment below with point-by-point responses, indicating where revisions will be incorporated.

read point-by-point responses

Referee: [FDTD simulations and optical modeling section] The attribution of the mid-IR absorption features specifically to grain-boundary LSPRs requires demonstrating that this model is uniquely favored. However, no quantitative model-comparison (e.g., chi-squared or residual analysis) is provided showing that a homogeneous Drude model or effective-medium approximation without explicit metallic boundaries fails to fit the FTIR data at comparable quality. This is load-bearing for the central claim.

Authors: We agree that a quantitative model comparison would strengthen the uniqueness argument. In the revised manuscript we will add chi-squared and residual analyses comparing the grain-boundary FDTD model against a homogeneous Drude model and an effective-medium approximation applied to the same FTIR spectra. Our existing simulations already show that only the explicit metallic boundaries reproduce the observed resonance positions and line shapes without adjustable parameters; the added metrics will make this explicit. revision: yes
Referee: [Experimental results and FTIR spectroscopy section] Control experiments isolating the grain-size dependence are absent. Spectra from larger-grain or single-crystal hyperdoped Si samples under identical hyperdoping conditions would be needed to confirm that the tunable mid-IR features disappear or shift when nanometric grains are not present.

Authors: We acknowledge the desirability of such controls. However, the out-of-equilibrium annealing process that produces the hyperdoped polycrystalline films inherently yields nanometric grains; single-crystal hyperdoped Si under identical doping and thermal conditions cannot be fabricated by the same route and would introduce different defect landscapes. Our evidence rests on the direct correlation between measured grain-size distributions (TEM) and resonance positions, together with simulations in which removing the boundaries eliminates the mid-IR features. We will expand the discussion to clarify this reasoning and the practical limitations on identical-condition controls. revision: no
Referee: [Discussion and conclusions] The universality statement (that the result extends to any doped semiconductor with nanometric grains regardless of the synthesis technique) is asserted from the polysilicon case alone. No additional material systems, theoretical scaling arguments, or grain-size threshold analysis are provided to support generalization beyond the specific hyperdoped polysilicon films studied.

Authors: The universality follows from the mechanism: metallic grain boundaries form in any doped semiconductor once grain size is nanometric, independent of material or growth method. We will revise the discussion to include a simple scaling argument based on the ratio of grain diameter to the plasma wavelength, demonstrating that resonances appear whenever grains remain much smaller than the relevant infrared wavelength. While no additional experimental systems are presented, this mechanistic scaling provides the requested theoretical support for generalization. revision: partial

Circularity Check

0 steps flagged

No circularity: experimental demonstration supported by independent measurements and modeling

full rationale

The paper's central claim rests on direct experimental observations (TEM grain-size statistics, FTIR spectra) combined with FDTD simulations that reproduce the measured resonances when grain boundaries are modeled as metallic interfaces. No derivation chain, equation, or prediction is shown that reduces by construction to quantities fitted from the same dataset. The universality assertion is presented as an extrapolation from the polysilicon case rather than a mathematical result derived from the paper's own equations. No self-citations are invoked as load-bearing uniqueness theorems, and no ansatz or renaming of known results is used to substitute for evidence. The work is self-contained against external benchmarks (microscopy images and spectra), consistent with a score of 0.

Axiom & Free-Parameter Ledger

0 free parameters · 2 axioms · 0 invented entities

The interpretation rests on standard electromagnetic theory and the domain assumption that grain boundaries in hyperdoped poly-Si behave as plasmon-supporting metal-dielectric interfaces; no free parameters or new entities are introduced in the abstract.

axioms (2)

standard math Standard electromagnetic theory and plasmonics principles apply to nanoscale grain-boundary interfaces.
Invoked to interpret the infrared response and to justify the FDTD simulations.
domain assumption Grain boundaries in hyperdoped polycrystalline silicon form effective metal-dielectric interfaces capable of supporting localized surface plasmons.
Central interpretive step linking microstructure to the observed optical behavior.

pith-pipeline@v0.9.0 · 5547 in / 1351 out tokens · 40652 ms · 2026-05-08T15:56:37.749401+00:00 · methodology

discussion (0)

Reference graph

Works this paper leans on

44 extracted references · 40 canonical work pages

[1]

The Journal of Physical Chemistry Letters , author =

Plasmon. The Journal of Physical Chemistry Letters , author =. 2014 , pages =. doi:10.1021/jz500037k , abstract =

work page doi:10.1021/jz500037k 2014
[2]

Nature Materials , author =

Localized surface plasmon resonances arising from free carriers in doped quantum dots , volume =. Nature Materials , author =. 2011 , pages =. doi:10.1038/nmat3004 , language =

work page doi:10.1038/nmat3004 2011
[3]

Physics Reports , author =

Plasmonic doped semiconductor nanocrystals:. Physics Reports , author =. 2017 , pages =. doi:10.1016/j.physrep.2017.01.003 , abstract =

work page doi:10.1016/j.physrep.2017.01.003 2017
[4]

Nanophotonics , author =

Semiconductor infrared plasmonics , volume =. Nanophotonics , author =. 2019 , pages =. doi:10.1515/nanoph-2019-0077 , abstract =

work page doi:10.1515/nanoph-2019-0077 2019
[5]

ACS Photonics , author =

Benchmarking the. ACS Photonics , author =. 2018 , pages =. doi:10.1021/acsphotonics.8b00438 , abstract =

work page doi:10.1021/acsphotonics.8b00438 2018
[6]

Advanced Materials , author =

Alternative. Advanced Materials , author =. 2013 , pages =. doi:10.1002/adma.201205076 , language =

work page doi:10.1002/adma.201205076 2013
[7]

Nano Letters , author =

Midinfrared. Nano Letters , author =. 2015 , pages =. doi:10.1021/acs.nanolett.5b03247 , abstract =

work page doi:10.1021/acs.nanolett.5b03247 2015
[8]

Intrinsic

Pichler, Peter , editor =. Intrinsic. 2004 , doi =

2004
[9]

The Journal of Physical Chemistry Letters , author =

Plasmons in. The Journal of Physical Chemistry Letters , author =. 2013 , pages =. doi:10.1021/jz401719u , abstract =

work page doi:10.1021/jz401719u 2013
[10]

2020 , pages =

Materials Characterization , author =. 2020 , pages =. doi:10.1016/j.matchar.2020.110174 , abstract =

work page doi:10.1016/j.matchar.2020.110174 2020
[11]

, year =

Maier, Stefan A. , year =. Plasmonics: fundamentals and applications , isbn =
[12]

Zeitschrift für Kristallographie , author =

Automated nanocrystal orientation and phase mapping in the transmission electron microscope on the basis of precession electron diffraction , volume =. Zeitschrift für Kristallographie , author =. 2010 , pages =. doi:10.1524/zkri.2010.1205 , abstract =

work page doi:10.1524/zkri.2010.1205 2010
[13]

(13) Bouit, P.-A.; Wetzel, G.; Berginc, G.; Loiseaux, B.; Toupet, L.; Feneyrou, P.; Bretonnière, Y.; Kamada, K.; Maury, O.; Andraud, C

Towards nano-scale photonics with micro-scale photons: the opportunities and challenges of mid-infrared plasmonics , volume =. Nanophotonics , author =. 2013 , pages =. doi:10.1515/nanoph-2012-0027 , abstract =

work page doi:10.1515/nanoph-2012-0027 2013
[14]

Materials Science in Semiconductor Processing , author =

Doping of semiconductor devices by. Materials Science in Semiconductor Processing , author =. 2017 , pages =. doi:10.1016/j.mssp.2016.11.008 , abstract =

work page doi:10.1016/j.mssp.2016.11.008 2017
[15]

Journal of Applied Physics , author =

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing , volume =. Journal of Applied Physics , author =. 2022 , pages =. doi:10.1063/5.0073827 , abstract =

work page doi:10.1063/5.0073827 2022
[16]

Nano Letters , author =

Plasmonic. Nano Letters , author =. 2015 , pages =. doi:10.1021/acs.nanolett.5b02287 , abstract =

work page doi:10.1021/acs.nanolett.5b02287 2015
[17]

ACS Photonics , author =

Hyper-. ACS Photonics , author =. 2021 , pages =. doi:10.1021/acsphotonics.1c00019 , abstract =

work page doi:10.1021/acsphotonics.1c00019 2021
[18]

ACS Applied Nano Materials , author =

Heavily. ACS Applied Nano Materials , author =. 2023 , pages =. doi:10.1021/acsanm.2c05088 , abstract =

work page doi:10.1021/acsanm.2c05088 2023
[19]

Nanophotonics , author =

Infrared nanoplasmonic properties of hyperdoped embedded. Nanophotonics , author =. 2022 , pages =. doi:10.1515/nanoph-2022-0283 , abstract =

work page doi:10.1515/nanoph-2022-0283 2022
[20]

ACS Nano , author =

Comparative. ACS Nano , author =. 2015 , note =. doi:10.1021/nn505416r , abstract =

work page doi:10.1021/nn505416r 2015
[21]

Optics Communications , author =

Optical properties of two interacting gold nanoparticles , volume =. Optics Communications , author =. 2003 , pages =. doi:10.1016/S0030-4018(03)01357-9 , abstract =

work page doi:10.1016/s0030-4018(03)01357-9 2003
[22]

Nano Letters , author =

Interparticle. Nano Letters , author =. 2003 , pages =. doi:10.1021/nl034197f , abstract =

work page doi:10.1021/nl034197f 2003
[23]

Physical Review B , author =

Observation of near-field coupling in metal nanoparticle chains using far-field polarization spectroscopy , volume =. Physical Review B , author =. 2002 , pages =. doi:10.1103/PhysRevB.65.193408 , language =

work page doi:10.1103/physrevb.65.193408 2002
[24]

The Journal of Physical Chemistry B , author =

Confined. The Journal of Physical Chemistry B , author =. 2005 , pages =. doi:10.1021/jp049084e , language =

work page doi:10.1021/jp049084e 2005
[25]

MATERIALS TRANSACTIONS , author =

Atomic. MATERIALS TRANSACTIONS , author =. 2007 , pages =. doi:10.2320/matertrans.MD200706 , language =

work page doi:10.2320/matertrans.md200706 2007
[26]

IEEE Transactions on Electron Devices , author =

Theory of conduction in polysilicon:. IEEE Transactions on Electron Devices , author =. 1984 , pages =. doi:10.1109/T-ED.1984.21554 , abstract =

work page doi:10.1109/t-ed.1984.21554 1984
[27]

Electrical Properties

Kamins, Ted. Electrical Properties. Polycrystalline Silicon for Integrated Circuits and Displays. 1998. doi:10.1007/978-1-4615-5577-3_5

work page doi:10.1007/978-1-4615-5577-3_5 1998
[28]

Progress in Materials Science , author =

Plasmonic metasurfaces:. Progress in Materials Science , author =. 2025 , pages =. doi:10.1016/j.pmatsci.2025.101508 , abstract =

work page doi:10.1016/j.pmatsci.2025.101508 2025
[29]

International Journal of Precision Engineering and Manufacturing-Green Technology , author =

Cost-. International Journal of Precision Engineering and Manufacturing-Green Technology , author =. 2024 , pages =. doi:10.1007/s40684-023-00580-x , abstract =

work page doi:10.1007/s40684-023-00580-x 2024
[30]

Proceedings of the National Academy of Sciences , author =

Criticality of metals and metalloids , volume =. Proceedings of the National Academy of Sciences , author =. 2015 , pages =. doi:10.1073/pnas.1500415112 , abstract =

work page doi:10.1073/pnas.1500415112 2015
[31]

Applied Sciences , author =

Plasmonic and. Applied Sciences , author =. 2016 , pages =. doi:10.3390/app6090239 , abstract =

work page doi:10.3390/app6090239 2016
[32]

Journal of Applied Physics , author =

Infrared surface plasmons on heavily doped silicon , volume =. Journal of Applied Physics , author =. 2011 , pages =. doi:10.1063/1.3672738 , abstract =

work page doi:10.1063/1.3672738 2011
[33]

Journal of Semiconductors , author =

Heavily doped silicon:. Journal of Semiconductors , author =. 2021 , pages =. doi:10.1088/1674-4926/42/6/062302 , abstract =

work page doi:10.1088/1674-4926/42/6/062302 2021
[34]

Materials Science and Engineering: A , author =

Interfacial state and potential barrier height associated with grain boundaries in polycrystalline silicon , volume =. Materials Science and Engineering: A , author =. 2007 , pages =. doi:10.1016/j.msea.2006.02.471 , abstract =

work page doi:10.1016/j.msea.2006.02.471 2007
[35]

IEEE Transactions on Electron Devices , author =

A model for conduction in polycrystalline silicon&\#8212. IEEE Transactions on Electron Devices , author =. 1981 , pages =. doi:10.1109/T-ED.1981.20504 , abstract =

work page doi:10.1109/t-ed.1981.20504 1981
[36]

Frontiers in Physics , author =

A. Frontiers in Physics , author =. 2021 , pages =. doi:10.3389/fphy.2020.586087 , abstract =

work page doi:10.3389/fphy.2020.586087 2021
[37]

Chemical Reviews , author =

Optical. Chemical Reviews , author =. 2022 , pages =. doi:10.1021/acs.chemrev.2c00078 , abstract =

work page doi:10.1021/acs.chemrev.2c00078 2022
[38]

Materials Science Reports , author =

Kinetics of solid phase crystallization in amorphous silicon , volume =. Materials Science Reports , author =. 1988 , pages =. doi:10.1016/S0920-2307(88)80005-7 , language =

work page doi:10.1016/s0920-2307(88)80005-7 1988
[39]

Nature Photonics , author =

Plasmonic meta-atoms and metasurfaces , volume =. Nature Photonics , author =. 2014 , pages =. doi:10.1038/nphoton.2014.247 , language =

work page doi:10.1038/nphoton.2014.247 2014
[40]

and Fundenberger,J

Beausir, B. and Fundenberger,J. J. , title =
[41]

Computer Physics Communications , volume=

MEEP: A flexible free-software package for electromagnetic simulations by the FDTD method , author=. Computer Physics Communications , volume=. 2010 , publisher=

2010
[42]

Applied Surface Science , author =

Formation of polycrystalline silicon with log-normal grain size distribution , volume =. Applied Surface Science , author =. 1998 , pages =. doi:10.1016/S0169-4332(97)00494-7 , abstract =

work page doi:10.1016/s0169-4332(97)00494-7 1998
[43]

Scientific Reports , author =

Challenges in nanofabrication for efficient optical metasurfaces , volume =. Scientific Reports , author =. 2021 , pages =. doi:10.1038/s41598-021-84666-z , abstract =

work page doi:10.1038/s41598-021-84666-z 2021
[44]

Nanoscale , author =

Hyperdoped. Nanoscale , author =. 2023 , pages =. doi:10.1039/D3NR00035D , abstract =

work page doi:10.1039/d3nr00035d 2023