pith. sign in

arxiv: 1904.05564 · v2 · pith:APYUR3OVnew · submitted 2019-04-11 · ❄️ cond-mat.str-el

Phonon-induced electronic relaxation in a strongly correlated system: the Sn/Si(111) (sqrt 3 times sqrt 3) adlayer revisited

classification ❄️ cond-mat.str-el
keywords sqrtelectronicsurfacecalculationsphonontimesbandcalculated
0
0 comments X
read the original abstract

The ordered adsorbate layer Sn/Si(111) $(\sqrt 3 \times \sqrt 3)$ with coverage of one third of a monolayer is considered as a realization of strong electronic correlation in surface physics. Our theoretical analysis shows that electron-hole pair excitations in this system can be long-lived, up to several hundred nanoseconds, since the decay into surface phonons is found to be a highly non-linear process. We combine first-principles calculations with help of a hybrid functional (HSE06) with modeling by a Mott-Hubbard Hamiltonian coupled to phononic degrees of freedom. The calculations show that the Sn/Si(111) $(\sqrt 3 \times \sqrt 3)$ surface is insulating and the two Sn-derived bands inside the substrate band gap can be described as the lower and upper Hubbard band in a Mott-Hubbard model with $U=0.75$eV. Furthermore, phonon spectra are calculated with particular emphasis on the Sn-related surface phonon modes. The calculations demonstrate that the adequate treatment of electronic correlations leads to a stiffening of the wagging mode of neighboring Sn atoms; thus, we predict that the onset of electronic correlations at low temperature should be observable in the phonon spectrum, too. The deformation potential for electron-phonon coupling is calculated for selected vibrational modes and the decay rate of an electron-hole excitation into multiple phonons is estimated, substantiating the very long lifetime of these excitations.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.