Normalization and electronic circuit correction for magnetic tunnel junction sensor performances comparison

In this manuscript we propose a theoretical model where the magneto-resistive elements are modelled as fluctuating resistances to correct the output voltage noise of tunnel magnetic junction (MTJ) from standard electronic circuits. This model is validated on single elements, partial and full Wheatstone bridge circuits, giving rise to a correction factor affecting the output noise voltage as well as sensitivity values. Combining the correction factor and a normalization by the number of MTJs pillars and the pillar surface, we show that the performances extracted by this method allow universal comparison between any results from literature.