Charge imprinting biases topology of correlated insulator in hBN-aligned rhombohedral multilayer graphene

Rhombohedral multilayer graphene aligned with hexagonal boron nitride (RMG-hBN) hosts correlated Chern phases, but the microscopic role of hBN stacking remains unclear, especially when the active carriers are displaced away from the moir\'e interface. Using Hartree-Fock calculations over layer numbers, twist angles, displacement fields, fillings, and hBN alignments, we show that correlated insulators are most robust at small twist angles and intermediate layer number ($N\simeq 6$), where bandwidth suppression is balanced by layer delocalization of the wavefunctions of the active carriers. Under moir\'e-distant conditions at filling $\nu=1$, the topology of the insulating state is strongly biased by charge imprinting: the hBN alignment shapes the occupied valence-band charge texture near the interface via moir\'e potential, which acts through long-range Coulomb interactions as a remote electrostatic template for doped conduction electrons. Depending on the alignment, this template favors either triangular charge localization associated with trivial insulators or honeycomb-like charge networks compatible with Chern insulators. Our results identify valence-band charge textures as a microscopic route by which a remote moir\'e interface controls correlated topology in multilayer graphene.