Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films

A. Kaur; H. K. Singh; M. K. Srivastava

arxiv: 1301.4043 · v1 · pith:QPRA5NHZnew · submitted 2013-01-17 · ❄️ cond-mat.str-el · cond-mat.mtrl-sci

Carrier localization and out of plane anisotropic magnetoresistance in Nd_(0.55-x) Sm_x Sr_(0.45) Mn O₃ thin films

M. K. Srivastava , A. Kaur , H. K. Singh This is my paper

classification ❄️ cond-mat.str-el cond-mat.mtrl-sci

keywords carrierlocalizationanisotropicfilmsmagnetoresistancethina-siteaverage

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The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size disorder due to substitution of smaller cations for larger.

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Carrier localization and out of plane anisotropic magnetoresistance in Nd_(0.55-x) Sm_x Sr_(0.45) Mn O₃ thin films

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