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L. V. Arapkina

Identifiers

  • name variant L. V. Arapkina 0.60 · backfill

Papers (15)

  1. Ge clusters and wetting layers forming from granular films on the Si(001) surface cond-mat.mtrl-sci · 2015 · author #2
  2. Investigation of quantum-dimensional structure parameters by X-ray optical, scanning tunneling and transmission electron microscopy cond-mat.mtrl-sci · 2013 · author #4
  3. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity cond-mat.mtrl-sci · 2012 · author #2
  4. Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity cond-mat.mtrl-sci · 2012 · author #2
  5. Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM cond-mat.mtrl-sci · 2012 · author #1
  6. Nucleation of Ge clusters at high temperatures on Ge/Si(001) wetting layer cond-mat.mtrl-sci · 2011 · author #2
  7. Absorption of Terahertz Radiation in Ge/Si(001) Heterostructures with Quantum Dots cond-mat.mes-hall · 2011 · author #4
  8. The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays cond-mat.mtrl-sci · 2010 · author #4
  9. Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED cond-mat.mtrl-sci · 2010 · author #1
  10. CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth cond-mat.mtrl-sci · 2010 · author #1
  11. Phase transition between (2 x 1) and c(8 x 8) reconstructions observed on the Si(001) surface around 600C cond-mat.mtrl-sci · 2010 · author #1
  12. Effect of interdiffusion and quantum confinement on Raman spectra of the Ge/Si(100) heterostructures with quantum dots cond-mat.mes-hall · 2009 · author #4
  13. Structure and peculiarities of the (8 x n)-type Si(001) surface prepared in a molecular-beam epitaxy chamber: a scanning tunneling microscopy study cond-mat.mtrl-sci · 2009 · author #1
  14. Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures cond-mat.mes-hall · 2009 · author #3
  15. Defects of Ge quantum dot arrays on the Si(001) surface cond-mat.mtrl-sci · 2009 · author #2

Mentions

  • 1304.0955 #4 · backfill · confidence 0.70 L. V. Arapkina
  • 1204.2509 #2 · backfill · confidence 0.70 L. V. Arapkina
  • 1203.5631 #2 · backfill · confidence 0.70 L. V. Arapkina
  • 1202.6224 #1 · backfill · confidence 0.70 L. V. Arapkina
  • 1105.6012 #2 · backfill · confidence 0.70 L. V. Arapkina
  • 1101.3527 #4 · backfill · confidence 0.70 L. V. Arapkina
  • 1010.1927 #4 · backfill · confidence 0.70 L. V. Arapkina
  • 1009.3909 #1 · backfill · confidence 0.70 L. V. Arapkina
  • 1009.3831 #1 · backfill · confidence 0.70 L. V. Arapkina
  • 1007.0329 #1 · backfill · confidence 0.70 L. V. Arapkina
  • 0908.1378 #4 · backfill · confidence 0.70 L. V. Arapkina
  • 0908.1346 #1 · backfill · confidence 0.70 L. V. Arapkina
  • 0908.1287 #3 · backfill · confidence 0.70 L. V. Arapkina
  • 0908.0841 #2 · backfill · confidence 0.70 L. V. Arapkina

Frequent Coauthors