Laser annealing of 90 nm SALD ZnO films on glass achieves 0.09 Ohm cm resistivity and oxygen sensitivity at optimized 0.21 uJ/pulse and 1 micron hatching parameters.
Oxygen vacancies in ZnO,
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Oxygen-rich ALD fabrication plus oxygen-free annealing suppresses oxygen vacancies and oxygen dimers in top-gate oxide transistors, yielding high-mobility In-rich devices with high PBTI reliability.
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High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering
Oxygen-rich ALD fabrication plus oxygen-free annealing suppresses oxygen vacancies and oxygen dimers in top-gate oxide transistors, yielding high-mobility In-rich devices with high PBTI reliability.