Laser annealing of 90 nm SALD ZnO films on glass achieves 0.09 Ohm cm resistivity and oxygen sensitivity at optimized 0.21 uJ/pulse and 1 micron hatching parameters.
Oxygen vacancies in ZnO,
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Oxygen-rich ALD fabrication plus oxygen-free annealing suppresses oxygen vacancies and oxygen dimers in top-gate oxide transistors, yielding high-mobility In-rich devices with high PBTI reliability.
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Laser Annealing of Transparent ZnO Thin Films: A Route to Improve Electrical Conductivity and Oxygen Sensing Capabilities
Laser annealing of 90 nm SALD ZnO films on glass achieves 0.09 Ohm cm resistivity and oxygen sensitivity at optimized 0.21 uJ/pulse and 1 micron hatching parameters.