Monolithically integrated InGaAs/GaAs quantum dot on silicon produces energy-time entangled photons under two-photon excitation, with two-photon interference visibilities up to 64% in short time windows.
In situ electron -beam lithography of deterministic single -quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy
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Inverse design reduces PCW design time by over 100x while achieving up to 10x bandwidth increase and 4x loss reduction for pulsed operation.
Electron beams offer a route to probe and potentially tailor quantum coherence and entanglement in semiconductor and 2D material systems.
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Perspective on tailoring quantum coherence with electron beams
Electron beams offer a route to probe and potentially tailor quantum coherence and entanglement in semiconductor and 2D material systems.