Py/BTO/LSMO heterostructures enable room-temperature voltage tuning of anomalous Hall effect via ferroelectric polarization coupling to interfacial magnetism, achieving 93% modulation and Rashba splitting per DFT.
Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tun- nel Junctions.Scientific Reports2015; 5(1): 12826
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Room-Temperature Electric-Field Control of Anomalous Hall Effect in Py/BTO/LSMO Heterostructures
Py/BTO/LSMO heterostructures enable room-temperature voltage tuning of anomalous Hall effect via ferroelectric polarization coupling to interfacial magnetism, achieving 93% modulation and Rashba splitting per DFT.