Fast gate-based reflectometry readout of Pauli spin blockade and tunable interdot coupling demonstrated in industry-fabricated silicon double quantum dots.
Title resolution pending
2 Pith papers cite this work. Polarity classification is still indexing.
2
Pith papers citing it
fields
cond-mat.mes-hall 2years
2026 2representative citing papers
Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.
citing papers explorer
-
Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.