A 3D-printed micro-ion trap with an enlarged loading zone improves hot-ion capture by keeping the Mathieu-q parameter low enough for effective laser cooling without lowering RF voltage.
T-junction ion trap array for two-dimensional ion shuttling, storage, and manipula- tion
3 Pith papers cite this work. Polarity classification is still indexing.
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The paper finds that 2D ion-trap architectures with T-junctions have lower total shuttling cost than 1D linear traps for standard quantum circuit blocks when linear and junction transport costs are set equal, with the advantage growing as qubit count increases.
Vertical ion shuttling protocols in multi-rail traps can limit motional excitation to under 8 quanta in 500 μs by protocol choice, with surface heating dominant only at longer durations.
citing papers explorer
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Design and fabrication of a micro-ion trap with a 3D-printed loading zone for improved hot-ion capture
A 3D-printed micro-ion trap with an enlarged loading zone improves hot-ion capture by keeping the Mathieu-q parameter low enough for effective laser cooling without lowering RF voltage.
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Shuttling in Bidimensional Segmented Ion-Trap Quantum Processors with T-Junctions
The paper finds that 2D ion-trap architectures with T-junctions have lower total shuttling cost than 1D linear traps for standard quantum circuit blocks when linear and junction transport costs are set equal, with the advantage growing as qubit count increases.
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Low-Excitation Vertical Ion Shuttling in Scalable Multi-Rail Ion Trap Architectures
Vertical ion shuttling protocols in multi-rail traps can limit motional excitation to under 8 quanta in 500 μs by protocol choice, with surface heating dominant only at longer durations.