DGLD applies domain-gated latent diffusion with label-quality gating and multi-task guidance to discover 12 novel energetic material leads validated by DFT, outperforming SMILES-LSTM, SELFIES-GA, and REINVENT baselines in novelty and on-target performance.
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AlSb in cubic and hexagonal phases shows quasi-direct band gaps of 1.71 eV and 1.50 eV with strong visible-UV absorption and increasing power factor with carrier concentration when computed with mBJ+U.
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Optoelectronic and Thermoelectric Properties of High-Performance AlSb Semiconductors
AlSb in cubic and hexagonal phases shows quasi-direct band gaps of 1.71 eV and 1.50 eV with strong visible-UV absorption and increasing power factor with carrier concentration when computed with mBJ+U.