A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor
pith:57WTZLPUopen to challenge →
classification
cond-mat.mtrl-sci
cond-mat.mes-hallcond-mat.str-elphysics.app-ph
keywords
ferroelectricaluminumcmoscompatiblejunctionmemristorscandiumtunnel
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We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.
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