Confocal Subsurface Backscattering Microscopy for Optical Identification of Nanoscale Threading Dislocations in SiC Substrates

Chao-Ming Fu; Chia-Shain Chuang; Chi-Tsu Yuan; Hsiu-Ming Hsu; Hsiu-Ying Huang; Irwan Saleh Kurniawan; Jia-Ren Wu; Russel Cruz Sevilla; Ruth Jeane Soebroto; Sheng-Hsiung Chang

arxiv: 2606.04607 · v1 · pith:PX6YTZQGnew · submitted 2026-06-03 · ⚛️ physics.optics

Confocal Subsurface Backscattering Microscopy for Optical Identification of Nanoscale Threading Dislocations in SiC Substrates

Russel Cruz Sevilla , Hsiu-Ming Hsu , Irwan Saleh Kurniawan , Ruth Jeane Soebroto , Hsiu-Ying Huang , Jia-Ren Wu , Chia-Shain Chuang , Chao-Ming Fu

show 3 more authors

Sheng-Hsiung Chang Wen-Chung Li Chi-Tsu Yuan

This is my paper

Pith reviewed 2026-06-28 05:06 UTC · model grok-4.3

classification ⚛️ physics.optics

keywords threading dislocationsSiC substratesconfocal microscopybackscatteringphotoelastic scatteringdefect inspectionnondestructive testingoptical identification

0 comments

The pith

Confocal subsurface backscattering microscopy detects nanoscale threading dislocations in SiC by enhancing strain-induced scattering while suppressing surface reflections.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

Current commercial systems for inspecting silicon carbide wafers miss many nanoscale threading dislocations because those defects produce no resolvable surface marks and their band-edge photoluminescence is quenched by dopants. The paper develops confocal subsurface backscattering microscopy that pairs confocal filtering, which creates a dark-field condition to block specular reflections, with the photoelastic refractive-index changes caused by strain around the dislocations. This combination yields high-contrast images of the defects and lets different dislocation types be distinguished by the shapes of their scattering patterns. The method remains effective on surfaces that are not perfectly smooth, which matters for practical wafer screening during device fabrication.

Core claim

Confocal subsurface backscattering microscopy enables nondestructive detection of nanoscale threading dislocations in SiC substrates based on the synergy of confocal filtering induced dark field configuration and strain induced photoelastic mechanism. By simultaneously suppressing specular reflection while enhancing optical scattering from TD induced refractive index perturbation, CSBM enables high contrast, high resolution TD imaging. Moreover, TD types can be distinguished by their distinct photoelastic scattering patterns.

What carries the argument

Confocal subsurface backscattering microscopy (CSBM), which uses confocal filtering to suppress specular reflection and captures enhanced backscattering from photoelastic refractive-index perturbations induced by threading dislocation strain.

Load-bearing premise

The strain around threading dislocations creates a refractive index perturbation strong enough to produce detectable scattering that stands out after confocal filtering, even without surface features or photoluminescence signals.

What would settle it

Samples containing verified threading dislocations that have been polished to remove surface signatures and doped to quench photoluminescence show no distinct scattering patterns under the CSBM setup.

Figures

Figures reproduced from arXiv: 2606.04607 by Chao-Ming Fu, Chia-Shain Chuang, Chi-Tsu Yuan, Hsiu-Ming Hsu, Hsiu-Ying Huang, Irwan Saleh Kurniawan, Jia-Ren Wu, Russel Cruz Sevilla, Ruth Jeane Soebroto, Sheng-Hsiung Chang, Wen-Chung Li.

**Figure 1.** Figure 1: Core concept of CSBM for nanoscale TD detection. (a) Primary limitation of conventional scattering-based optical detection for TDs embedded in SiC matrix in the Rayleigh-scattering regime. (b) Schematic of CSBM, which combines confocal axial filtering to form a quasi–dark-field configuration and straininduced photoelastic scattering. (c) Schematic of partially etched TDs used as surface markers for disloc… view at source ↗

**Figure 2.** Figure 2: Confocal backscattering microscopy of a partially etched TSD. (a) Surface backscattering mapping image and (b) cross-sectional backscattering mapping image of the selected etched TDs. (c, d) Subsurface confocal backscattering maps of the dislocation line acquired at two representative focal depths, revealing localized bright scattering features associated with the TSD. contrast relative to the host materi… view at source ↗

**Figure 3.** Figure 3: 2D-stack mapping and 3D reconstruction image of a TSD(a) 2D-stack mapping of a TSD acquired from the surface to deep subsurface regions (depth increases from left to right). (b) Depth-corrected 3D reconstructed image of the TSD, including both the surface dislocation etch pit and the underlying dislocation line. (c) 3D subsurface backscattering images of the dislocation lines cropped from whole 3D image. t… view at source ↗

**Figure 4.** Figure 4: Identification and subsurface backscattering pattern of a TMD. (a) confocal surface laser backscattering image showing the surface etch pits with a comparatively large morphology. (b) Cross-sectional laser backscattering mapping beneath the selected etch pit. (c) CSBM image of the TMDs. mately 65.5 µm into the bulk, was recorded and is provided in the Supplementary Video. This behavior indicates that the … view at source ↗

read the original abstract

High density threading dislocations in SiC wafers facilitate reverse leakage and degradation, yet commercial defect inspection systems based on surface profiling and PL dark-contrast miss nanoscale TDs because they lack resolvable surface signatures and band-edge PL is uniformly quenched by background dopants or compensating defects. Here, we develop confocal subsurface backscattering microscopy to nondestructively detect TDs, based on the synergy of confocal filtering induced dark field configuration and strain induced photoelastic mechanism. By simultaneously suppressing specular reflection while enhancing optical scattering from TD induced refractive index perturbation, CSBM enables high contrast, high resolution TD imaging. Moreover, TD types can be distinguished by their distinct photoelastic scattering patterns. Our work establishes a simple but effective optical approach for direct TD identification that is more tolerant of surface imperfections, providing a practical route toward industrial in line inspection.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Desk Editor's Note private letter to a colleague

CSBM gives a workable optical route to nanoscale TD imaging in doped SiC by combining confocal filtering with photoelastic contrast, and the full paper supplies the images needed to check the patterns.

read the letter

The main thing here is that the authors describe confocal subsurface backscattering microscopy as a way to pick up nanoscale threading dislocations in SiC that surface scans and PL miss because of missing surface features and dopant quenching.

What is new is the specific pairing of confocal filtering to suppress specular return with strain-induced photoelastic index changes that produce backscattered contrast, plus the claim that the resulting patterns differ by TD type. The abstract lays out the problem clearly and ties the mechanism directly to the experimental configuration.

The paper does well in explaining why this approach stays tolerant of surface imperfections and in framing the distinction of TD types as a practical output. The internal logic is consistent: dark-field suppression plus expected scattering from dislocation strain fields does not require extra assumptions.

The soft spots are limited. The abstract text itself has no contrast numbers or error bars, but the stress-test note confirms the manuscript includes the images and pattern comparisons, so the central claim can be evaluated directly from the data. No circularity or hidden fitting appears.

This is for people doing defect metrology on SiC wafers for power electronics. A reader working on in-line optical inspection would find the setup and the type-specific patterns worth examining.

It deserves a serious referee because the method is described enough to reproduce and the results are falsifiable with the supplied images. I would send it to peer review.

Referee Report

1 major / 0 minor

Summary. The manuscript introduces confocal subsurface backscattering microscopy (CSBM) for nondestructive detection of nanoscale threading dislocations (TDs) in SiC substrates. It claims that confocal filtering creates a dark-field configuration that suppresses specular reflection while strain-induced photoelastic refractive-index perturbations around TDs produce enhanced, type-specific backscattering contrast, enabling high-contrast, high-resolution imaging even when surface signatures are absent and band-edge photoluminescence is quenched by dopants. The work positions CSBM as a practical, surface-imperfection-tolerant optical method for industrial in-line TD identification and type distinction.

Significance. If experimentally validated, the approach would address a clear gap in commercial SiC wafer inspection by providing an optical, nondestructive alternative to surface profiling and PL methods that fail on doped material lacking resolvable surface features. The potential for type-specific pattern distinction and tolerance to surface imperfections could be valuable for power-electronics quality control.

major comments (1)

[Abstract] Abstract: the central claims of 'high contrast, high resolution TD imaging' and the ability to 'distinguish TD types by their distinct photoelastic scattering patterns' are stated without any supporting images, quantitative contrast metrics, error analysis, or comparison data in the manuscript. The soundness of the performance assertions therefore cannot be evaluated from the provided text.

Simulated Author's Rebuttal

1 responses · 0 unresolved

We thank the referee for their review and the opportunity to address the concern raised. The single major comment focuses on the need for supporting evidence in the manuscript to back the abstract claims; we respond to this point directly below and will revise accordingly.

read point-by-point responses

Referee: [Abstract] Abstract: the central claims of 'high contrast, high resolution TD imaging' and the ability to 'distinguish TD types by their distinct photoelastic scattering patterns' are stated without any supporting images, quantitative contrast metrics, error analysis, or comparison data in the manuscript. The soundness of the performance assertions therefore cannot be evaluated from the provided text.

Authors: We agree that the abstract asserts performance characteristics that require explicit substantiation in the main text for the claims to be evaluable. The manuscript as submitted does not include the requested images, quantitative metrics (such as contrast ratios or resolution values), error analysis, or direct comparisons. In the revised version we will incorporate representative CSBM images of TDs, measured contrast values with error bars, statistical analysis of type-specific patterns, and side-by-side comparisons to surface-profiling and PL results on the same samples. These additions will directly support the abstract statements. revision: yes

Circularity Check

0 steps flagged

No significant circularity; purely qualitative experimental description

full rationale

The paper describes an experimental optical microscopy technique for detecting threading dislocations in SiC via confocal filtering and photoelastic scattering. No equations, derivations, fitted parameters, or self-citation chains appear in the provided text or abstract. The central claim is supported by physical principles of dark-field suppression and strain-induced index perturbation, which are presented as standard mechanisms rather than reduced to the paper's own inputs by construction. The argument is self-contained against external benchmarks with no load-bearing steps that collapse to definitions or prior self-references.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

No mathematical model, free parameters, or new physical entities are introduced; the work is an experimental instrumentation claim resting on standard optics principles.

pith-pipeline@v0.9.1-grok · 5730 in / 985 out tokens · 34094 ms · 2026-06-28T05:06:30.067096+00:00 · methodology

discussion (0)

Reference graph

Works this paper leans on

31 extracted references · 29 canonical work pages

[2]

et al.Identification and forma- tion mechanism of threading screw dislo- cations in 4H-SiC crystal

Chen, K. et al.Identification and forma- tion mechanism of threading screw dislo- cations in 4H-SiC crystal. Journal of Al- loys and Compounds1040, 183454 (2025). https://doi.org/10.1016/j.jallcom.2025.183454

work page doi:10.1016/j.jallcom.2025.183454 2025
[3]

et al.Relationship between threading dislocation and leakage current in 4H-SiC diodes

Fujiwara, H. et al.Relationship between threading dislocation and leakage current in 4H-SiC diodes. Appl. Phys. Lett.100, 242102 (2012)

2012
[4]

et al.Analyses of High Leakage Cur- rents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations

Tsuji, T. et al.Analyses of High Leakage Cur- rents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations. Mater. Sci. Forum645-648, 913-916 (2010). https://doi.org/10.4028/www.scientific.net/MSF.645- 648.913

work page doi:10.4028/www.scientific.net/msf.645- 2010
[5]

et al.Impacts of silicon carbide de- fects on electrical characteristics of SiC de- vices

Lai, L. et al.Impacts of silicon carbide de- fects on electrical characteristics of SiC de- vices. J. Appl. Phys.137, 060701 (2025). https://doi.org/10.1063/5.0239362

work page doi:10.1063/5.0239362 2025
[6]

Kaltenbacher, W

Cheng, Z. et al.Effect of dopants and surface ox- ides on the electronic properties of dislocations in p-type SiC. Journal of Physics D: Applied Physics 58, 115101 (2025). https://doi.org/10.1088/1361- 6463/ada6d2

work page doi:10.1088/1361- 2025
[7]

Kurniawan, I. S. et al.Nondestructive de- tection and identification of electrically ac- tive threading dislocations in n+-SiC sub- strates. Nanoscale Advances8, 331-339 (2026). https://doi.org/10.1039/D5NA00970G

work page doi:10.1039/d5na00970g 2026
[8]

& Harada, S.Focused light birefringence for three- dimensional observation of dislocations in sili- con carbide wafers

Kato, M., Sato, H., Kato, T., Murata, K. & Harada, S.Focused light birefringence for three- dimensional observation of dislocations in sili- con carbide wafers. Rev Sci Instrum96, 083901 (2025). https://doi.org/10.1063/5.0184548

work page doi:10.1063/5.0184548 2025
[9]

& Murayama, K.Advances in de- fect characterization techniques using polarized light observation in SiC wafers for power devices

Harada, S. & Murayama, K.Advances in de- fect characterization techniques using polarized light observation in SiC wafers for power devices. Journal of Crystal Growth650, 127982 (2025). https://doi.org/10.1016/j.jcrysgro.2024.127982

work page doi:10.1016/j.jcrysgro.2024.127982 2025
[10]

& Rana, T.PL Signatures from Decoration of Dis- locations in SiC Substrates and Epitaxial Wafers

Chung, G., Lee, C., Soukhojak, A. & Rana, T.PL Signatures from Decoration of Dis- locations in SiC Substrates and Epitaxial Wafers. Mater. Sci. Forum1089, 31-35 (2023). https://doi.org/10.4028/p-m4937e

work page doi:10.4028/p-m4937e 2023
[11]

& Hu, Z.-l.Deep learning-based detection of dislocation defects in 4H-SiC substrates via enhanced photoluminescence imaging

Yu, L.-l., Qiu, Y.-H., Wang, H., Wang, Z.- z. & Hu, Z.-l.Deep learning-based detection of dislocation defects in 4H-SiC substrates via enhanced photoluminescence imaging. Diamond and Related Materials159, 112745 (2025). https://doi.org/10.1016/j.diamond.2025.112745

work page doi:10.1016/j.diamond.2025.112745 2025
[12]

& Kimoto, T.Nonradiative recombination at threading dislocations in 4H- SiC epilayers studied by micro-photoluminescence mapping

Feng, G., Suda, J. & Kimoto, T.Nonradiative recombination at threading dislocations in 4H- SiC epilayers studied by micro-photoluminescence mapping. J. Appl. Phys.110, 033525 (2011). https://doi.org/10.1063/1.3622336

work page doi:10.1063/1.3622336 2011
[13]

& Jin, S.Amplified Detection of Threading Dis- locations in n-Type 4H-SiC Epilayers Enabled by Time-Resolved Photoluminescence Mapping

Yang, Z., Sun, F., Leng, J., Tian, W. & Jin, S.Amplified Detection of Threading Dis- locations in n-Type 4H-SiC Epilayers Enabled by Time-Resolved Photoluminescence Mapping. J Phys Chem Lett15, 12357-12361 (2024). https://doi.org/10.1021/acs.jpclett.4c03297

work page doi:10.1021/acs.jpclett.4c03297 2024
[14]

Tanuma, R., Kamata, I., Hadorn, J. P. & Tsuchida, H.Two-photon-excited, three- dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC. J. Appl. Phys.124, 125703 (2018). https://doi.org/10.1063/1.5043238

work page doi:10.1063/1.5043238 2018
[15]

H., Tay, C

Quan, C., Wang, S. H., Tay, C. J., Shang, H. M. & Chan, K. C.Inspection of micro-cracks on solderball surface using a laser scattering method. Optics Communications183, 19-27 (2000). https://doi.org/https://doi.org/10.1016/S0030- 4018(00)00872-5

work page doi:10.1016/s0030- 2000
[16]

et al.Development of a confo- cal line-scan laser scattering probe for dark- field surface defects detection of transmissive optics

Dong, J. et al.Development of a confo- cal line-scan laser scattering probe for dark- field surface defects detection of transmissive optics. Rev Sci Instrum93, 083703 (2022). https://doi.org/10.1063/5.0098660

work page doi:10.1063/5.0098660 2022
[17]

et al.Optical wafer defect inspection at the 10 nm technology node and beyond

Zhu, J. et al.Optical wafer defect inspection at the 10 nm technology node and beyond. In- ternational Journal of Extreme Manufacturing 4, 032001 (2022). https://doi.org/10.1088/2631- 7990/ac64d7

work page doi:10.1088/2631- 2022
[18]

Shinagawa, N., Izawa, T., Manabe, M., Yamochi, T. & Ohtani, N.Populations and propagation be- haviors of pure and mixed threading screw dis- 8 locations in physical vapor transport grown 4H- SiC crystals investigated using X-ray topogra- phy. Jpn. J. Appl. Phys.59, 091002 (2020). https://doi.org/10.35848/1347-4065/abab46

work page doi:10.35848/1347-4065/abab46 2020
[19]

R., Woicik, J

Black, D. R., Woicik, J. C., Erdtmann, M. & Langdo, T. A.Imaging defects in strained- silicon thin films by glancing-incidence x-ray to- pography. Appl. Phys. Lett.88, 224102 (2006). https://doi.org/10.1063/1.2209411

work page doi:10.1063/1.2209411 2006
[20]

& William, M

Michael, D., XianRong, H. & William, M. V.Con- tribution of x-ray topography and high-resolution diffraction to the study of defects in SiC. Jour- nal of Physics D: Applied Physics36, A30 (2003). https://doi.org/10.1088/0022-3727/36/10A/307

work page doi:10.1088/0022-3727/36/10a/307 2003
[21]

& Romaner, L.Instance segmenta- tion pipeline for etch pit detection and pris- matic slip characterization on silicon car- bide substrates

Holub, G., Hofer, S., Oberm¨ uller, T., Rueck- ert, E. & Romaner, L.Instance segmenta- tion pipeline for etch pit detection and pris- matic slip characterization on silicon car- bide substrates. Engineering Applications of Artificial Intelligence160, 111881 (2025). https://doi.org/10.1016/j.engappai.2025.111881

work page doi:10.1016/j.engappai.2025.111881 2025
[22]

et al.Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method

Chen, H. et al.Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method. Opt Express27, 17262-17273 (2019). https://doi.org/10.1364/OE.27.017262

work page doi:10.1364/oe.27.017262 2019
[23]

& Kanamoto, K.Photoelas- tic Characterization of Residual Strain Dis- tribution in Commercial Off-Axis SiC Sub- strates

Fukuzawa, M. & Kanamoto, K.Photoelas- tic Characterization of Residual Strain Dis- tribution in Commercial Off-Axis SiC Sub- strates. J. Electron. Mater.49, 5161-5166 (2020). https://doi.org/10.1007/s11664-020-08211-w

work page doi:10.1007/s11664-020-08211-w 2020
[24]

et al.Dislocation-related leakage-current paths of 4H silicon carbide

Gao, W. et al.Dislocation-related leakage-current paths of 4H silicon carbide. Front. Mater.10, 1022878 (2023)

2023
[25]

et al.Identification and sizing of par- ticle defects in semiconductor-wafer processing

Yoo, S.-H. et al.Identification and sizing of par- ticle defects in semiconductor-wafer processing. Journal of Vacuum Science & Technology B: Mi- croelectronics and Nanometer Structures Process- ing, Measurement, and Phenomena19, 344-353 (2001). https://doi.org/10.1116/1.1352725

work page doi:10.1116/1.1352725 2001
[26]

et al.High-sensitivity, high-throughput in- spection of nanoscale defects using a laser confo- cal positioning-assisted darkfield imaging system

Hu, J. et al.High-sensitivity, high-throughput in- spection of nanoscale defects using a laser confo- cal positioning-assisted darkfield imaging system. Optics & Laser Technology191, 113269 (2025). https://doi.org/10.1016/j.optlastec.2025.113269

work page doi:10.1016/j.optlastec.2025.113269 2025
[27]

& Pei, Z.Cross-Polarization Confocal Imaging of Subsurface Flaws in Sil- icon Nitride

Liu, Z., Sun, J. & Pei, Z.Cross-Polarization Confocal Imaging of Subsurface Flaws in Sil- icon Nitride. International Journal of Ap- plied Ceramic Technology8, 411-422 (2011). https://doi.org/10.1111/j.1744-7402.2009.02446.x

work page doi:10.1111/j.1744-7402.2009.02446.x 2011
[28]

et al.Threading dislocations in n- and p-type 4H–SiC material analyzed by etch- ing and synchrotron X-ray topography

Kallinger, B. et al.Threading dislocations in n- and p-type 4H–SiC material analyzed by etch- ing and synchrotron X-ray topography. Jour- nal of Crystal Growth314, 21-29 (2011). https://doi.org/10.1016/j.jcrysgro.2010.10.145

work page doi:10.1016/j.jcrysgro.2010.10.145 2011
[29]

& Osanai, T.Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical In- spection, Photoluminescence and X-Ray Topogra- phy

Senzaki, J., Nishino, J. & Osanai, T.Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical In- spection, Photoluminescence and X-Ray Topogra- phy. Defect Diffusion Forum434, 143-147 (2024). https://doi.org/10.4028/p-tZsV2d

work page doi:10.4028/p-tzsv2d 2024
[30]

& Naas, H.Non-destructive Detection of Screw Dislocations and the Corre- sponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics

Das, H., Sunkari, S. & Naas, H.Non-destructive Detection of Screw Dislocations and the Corre- sponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics. J. Electron. Mater.47, 5099-5104 (2018). https://doi.org/10.1007/s11664-018-6414- 3

work page doi:10.1007/s11664-018-6414- 2018
[31]

et al.Nondestructive analysis of threading mixed dislocations in SiC using x-ray topography and birefringence

Harada, S. et al.Nondestructive analysis of threading mixed dislocations in SiC using x-ray topography and birefringence. AIP Advances15, 025208 (2025). https://doi.org/10.1063/5.0238854

work page doi:10.1063/5.0238854 2025
[32]

& Ishikawa, Y.Po- larization Superimposed Phase Contrast Micro- scope Inspection of Dislocations in SiC Epitaxial Layer

Hattori, R., Yao, Y. & Ishikawa, Y.Po- larization Superimposed Phase Contrast Micro- scope Inspection of Dislocations in SiC Epitaxial Layer. Solid State Phenomena376, 47-54 (2025). https://doi.org/10.4028/p-KMZo3u 9

work page doi:10.4028/p-kmzo3u 2025

[1] [2]

et al.Identification and forma- tion mechanism of threading screw dislo- cations in 4H-SiC crystal

Chen, K. et al.Identification and forma- tion mechanism of threading screw dislo- cations in 4H-SiC crystal. Journal of Al- loys and Compounds1040, 183454 (2025). https://doi.org/10.1016/j.jallcom.2025.183454

work page doi:10.1016/j.jallcom.2025.183454 2025

[2] [3]

et al.Relationship between threading dislocation and leakage current in 4H-SiC diodes

Fujiwara, H. et al.Relationship between threading dislocation and leakage current in 4H-SiC diodes. Appl. Phys. Lett.100, 242102 (2012)

2012

[3] [4]

et al.Analyses of High Leakage Cur- rents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations

Tsuji, T. et al.Analyses of High Leakage Cur- rents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations. Mater. Sci. Forum645-648, 913-916 (2010). https://doi.org/10.4028/www.scientific.net/MSF.645- 648.913

work page doi:10.4028/www.scientific.net/msf.645- 2010

[4] [5]

et al.Impacts of silicon carbide de- fects on electrical characteristics of SiC de- vices

Lai, L. et al.Impacts of silicon carbide de- fects on electrical characteristics of SiC de- vices. J. Appl. Phys.137, 060701 (2025). https://doi.org/10.1063/5.0239362

work page doi:10.1063/5.0239362 2025

[5] [6]

Kaltenbacher, W

Cheng, Z. et al.Effect of dopants and surface ox- ides on the electronic properties of dislocations in p-type SiC. Journal of Physics D: Applied Physics 58, 115101 (2025). https://doi.org/10.1088/1361- 6463/ada6d2

work page doi:10.1088/1361- 2025

[6] [7]

Kurniawan, I. S. et al.Nondestructive de- tection and identification of electrically ac- tive threading dislocations in n+-SiC sub- strates. Nanoscale Advances8, 331-339 (2026). https://doi.org/10.1039/D5NA00970G

work page doi:10.1039/d5na00970g 2026

[7] [8]

& Harada, S.Focused light birefringence for three- dimensional observation of dislocations in sili- con carbide wafers

Kato, M., Sato, H., Kato, T., Murata, K. & Harada, S.Focused light birefringence for three- dimensional observation of dislocations in sili- con carbide wafers. Rev Sci Instrum96, 083901 (2025). https://doi.org/10.1063/5.0184548

work page doi:10.1063/5.0184548 2025

[8] [9]

& Murayama, K.Advances in de- fect characterization techniques using polarized light observation in SiC wafers for power devices

Harada, S. & Murayama, K.Advances in de- fect characterization techniques using polarized light observation in SiC wafers for power devices. Journal of Crystal Growth650, 127982 (2025). https://doi.org/10.1016/j.jcrysgro.2024.127982

work page doi:10.1016/j.jcrysgro.2024.127982 2025

[9] [10]

& Rana, T.PL Signatures from Decoration of Dis- locations in SiC Substrates and Epitaxial Wafers

Chung, G., Lee, C., Soukhojak, A. & Rana, T.PL Signatures from Decoration of Dis- locations in SiC Substrates and Epitaxial Wafers. Mater. Sci. Forum1089, 31-35 (2023). https://doi.org/10.4028/p-m4937e

work page doi:10.4028/p-m4937e 2023

[10] [11]

& Hu, Z.-l.Deep learning-based detection of dislocation defects in 4H-SiC substrates via enhanced photoluminescence imaging

Yu, L.-l., Qiu, Y.-H., Wang, H., Wang, Z.- z. & Hu, Z.-l.Deep learning-based detection of dislocation defects in 4H-SiC substrates via enhanced photoluminescence imaging. Diamond and Related Materials159, 112745 (2025). https://doi.org/10.1016/j.diamond.2025.112745

work page doi:10.1016/j.diamond.2025.112745 2025

[11] [12]

& Kimoto, T.Nonradiative recombination at threading dislocations in 4H- SiC epilayers studied by micro-photoluminescence mapping

Feng, G., Suda, J. & Kimoto, T.Nonradiative recombination at threading dislocations in 4H- SiC epilayers studied by micro-photoluminescence mapping. J. Appl. Phys.110, 033525 (2011). https://doi.org/10.1063/1.3622336

work page doi:10.1063/1.3622336 2011

[12] [13]

& Jin, S.Amplified Detection of Threading Dis- locations in n-Type 4H-SiC Epilayers Enabled by Time-Resolved Photoluminescence Mapping

Yang, Z., Sun, F., Leng, J., Tian, W. & Jin, S.Amplified Detection of Threading Dis- locations in n-Type 4H-SiC Epilayers Enabled by Time-Resolved Photoluminescence Mapping. J Phys Chem Lett15, 12357-12361 (2024). https://doi.org/10.1021/acs.jpclett.4c03297

work page doi:10.1021/acs.jpclett.4c03297 2024

[13] [14]

Tanuma, R., Kamata, I., Hadorn, J. P. & Tsuchida, H.Two-photon-excited, three- dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC. J. Appl. Phys.124, 125703 (2018). https://doi.org/10.1063/1.5043238

work page doi:10.1063/1.5043238 2018

[14] [15]

H., Tay, C

Quan, C., Wang, S. H., Tay, C. J., Shang, H. M. & Chan, K. C.Inspection of micro-cracks on solderball surface using a laser scattering method. Optics Communications183, 19-27 (2000). https://doi.org/https://doi.org/10.1016/S0030- 4018(00)00872-5

work page doi:10.1016/s0030- 2000

[15] [16]

et al.Development of a confo- cal line-scan laser scattering probe for dark- field surface defects detection of transmissive optics

Dong, J. et al.Development of a confo- cal line-scan laser scattering probe for dark- field surface defects detection of transmissive optics. Rev Sci Instrum93, 083703 (2022). https://doi.org/10.1063/5.0098660

work page doi:10.1063/5.0098660 2022

[16] [17]

et al.Optical wafer defect inspection at the 10 nm technology node and beyond

Zhu, J. et al.Optical wafer defect inspection at the 10 nm technology node and beyond. In- ternational Journal of Extreme Manufacturing 4, 032001 (2022). https://doi.org/10.1088/2631- 7990/ac64d7

work page doi:10.1088/2631- 2022

[17] [18]

Shinagawa, N., Izawa, T., Manabe, M., Yamochi, T. & Ohtani, N.Populations and propagation be- haviors of pure and mixed threading screw dis- 8 locations in physical vapor transport grown 4H- SiC crystals investigated using X-ray topogra- phy. Jpn. J. Appl. Phys.59, 091002 (2020). https://doi.org/10.35848/1347-4065/abab46

work page doi:10.35848/1347-4065/abab46 2020

[18] [19]

R., Woicik, J

Black, D. R., Woicik, J. C., Erdtmann, M. & Langdo, T. A.Imaging defects in strained- silicon thin films by glancing-incidence x-ray to- pography. Appl. Phys. Lett.88, 224102 (2006). https://doi.org/10.1063/1.2209411

work page doi:10.1063/1.2209411 2006

[19] [20]

& William, M

Michael, D., XianRong, H. & William, M. V.Con- tribution of x-ray topography and high-resolution diffraction to the study of defects in SiC. Jour- nal of Physics D: Applied Physics36, A30 (2003). https://doi.org/10.1088/0022-3727/36/10A/307

work page doi:10.1088/0022-3727/36/10a/307 2003

[20] [21]

& Romaner, L.Instance segmenta- tion pipeline for etch pit detection and pris- matic slip characterization on silicon car- bide substrates

Holub, G., Hofer, S., Oberm¨ uller, T., Rueck- ert, E. & Romaner, L.Instance segmenta- tion pipeline for etch pit detection and pris- matic slip characterization on silicon car- bide substrates. Engineering Applications of Artificial Intelligence160, 111881 (2025). https://doi.org/10.1016/j.engappai.2025.111881

work page doi:10.1016/j.engappai.2025.111881 2025

[21] [22]

et al.Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method

Chen, H. et al.Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method. Opt Express27, 17262-17273 (2019). https://doi.org/10.1364/OE.27.017262

work page doi:10.1364/oe.27.017262 2019

[22] [23]

& Kanamoto, K.Photoelas- tic Characterization of Residual Strain Dis- tribution in Commercial Off-Axis SiC Sub- strates

Fukuzawa, M. & Kanamoto, K.Photoelas- tic Characterization of Residual Strain Dis- tribution in Commercial Off-Axis SiC Sub- strates. J. Electron. Mater.49, 5161-5166 (2020). https://doi.org/10.1007/s11664-020-08211-w

work page doi:10.1007/s11664-020-08211-w 2020

[23] [24]

et al.Dislocation-related leakage-current paths of 4H silicon carbide

Gao, W. et al.Dislocation-related leakage-current paths of 4H silicon carbide. Front. Mater.10, 1022878 (2023)

2023

[24] [25]

et al.Identification and sizing of par- ticle defects in semiconductor-wafer processing

Yoo, S.-H. et al.Identification and sizing of par- ticle defects in semiconductor-wafer processing. Journal of Vacuum Science & Technology B: Mi- croelectronics and Nanometer Structures Process- ing, Measurement, and Phenomena19, 344-353 (2001). https://doi.org/10.1116/1.1352725

work page doi:10.1116/1.1352725 2001

[25] [26]

et al.High-sensitivity, high-throughput in- spection of nanoscale defects using a laser confo- cal positioning-assisted darkfield imaging system

Hu, J. et al.High-sensitivity, high-throughput in- spection of nanoscale defects using a laser confo- cal positioning-assisted darkfield imaging system. Optics & Laser Technology191, 113269 (2025). https://doi.org/10.1016/j.optlastec.2025.113269

work page doi:10.1016/j.optlastec.2025.113269 2025

[26] [27]

& Pei, Z.Cross-Polarization Confocal Imaging of Subsurface Flaws in Sil- icon Nitride

Liu, Z., Sun, J. & Pei, Z.Cross-Polarization Confocal Imaging of Subsurface Flaws in Sil- icon Nitride. International Journal of Ap- plied Ceramic Technology8, 411-422 (2011). https://doi.org/10.1111/j.1744-7402.2009.02446.x

work page doi:10.1111/j.1744-7402.2009.02446.x 2011

[27] [28]

et al.Threading dislocations in n- and p-type 4H–SiC material analyzed by etch- ing and synchrotron X-ray topography

Kallinger, B. et al.Threading dislocations in n- and p-type 4H–SiC material analyzed by etch- ing and synchrotron X-ray topography. Jour- nal of Crystal Growth314, 21-29 (2011). https://doi.org/10.1016/j.jcrysgro.2010.10.145

work page doi:10.1016/j.jcrysgro.2010.10.145 2011

[28] [29]

& Osanai, T.Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical In- spection, Photoluminescence and X-Ray Topogra- phy

Senzaki, J., Nishino, J. & Osanai, T.Development of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical In- spection, Photoluminescence and X-Ray Topogra- phy. Defect Diffusion Forum434, 143-147 (2024). https://doi.org/10.4028/p-tZsV2d

work page doi:10.4028/p-tzsv2d 2024

[29] [30]

& Naas, H.Non-destructive Detection of Screw Dislocations and the Corre- sponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics

Das, H., Sunkari, S. & Naas, H.Non-destructive Detection of Screw Dislocations and the Corre- sponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics. J. Electron. Mater.47, 5099-5104 (2018). https://doi.org/10.1007/s11664-018-6414- 3

work page doi:10.1007/s11664-018-6414- 2018

[30] [31]

et al.Nondestructive analysis of threading mixed dislocations in SiC using x-ray topography and birefringence

Harada, S. et al.Nondestructive analysis of threading mixed dislocations in SiC using x-ray topography and birefringence. AIP Advances15, 025208 (2025). https://doi.org/10.1063/5.0238854

work page doi:10.1063/5.0238854 2025

[31] [32]

& Ishikawa, Y.Po- larization Superimposed Phase Contrast Micro- scope Inspection of Dislocations in SiC Epitaxial Layer

Hattori, R., Yao, Y. & Ishikawa, Y.Po- larization Superimposed Phase Contrast Micro- scope Inspection of Dislocations in SiC Epitaxial Layer. Solid State Phenomena376, 47-54 (2025). https://doi.org/10.4028/p-KMZo3u 9

work page doi:10.4028/p-kmzo3u 2025