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arxiv: 2605.09843 · v1 · submitted 2026-05-11 · ⚛️ physics.optics · physics.data-an

Recognition: no theorem link

Sparse Spectral Imaging for Thickness Mapping of 3R-MoS₂ on PDMS

Benjamin Laudert, Falk Eilenberger, Fatemeh Abtahi, Sarka Vavreckova, Sebastian W. Schmitt

Pith reviewed 2026-05-12 02:48 UTC · model grok-4.3

classification ⚛️ physics.optics physics.data-an
keywords sparse spectral imagingthickness mappingMoS2PDMSreflectancemultivariate Gaussian modelvan der Waals materialsthin-film characterization
0
0 comments X

The pith

Sparse sampling at five near-infrared wavelengths enables thickness mapping of 3R-MoS2 with 8.3 nm uncertainty up to 691 nm.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper develops a method for non-destructive, spatially resolved thickness characterization of rhombohedral MoS2 on PDMS using only five discrete intensity images captured through bandpass filters. It combines a framework to pick optimal wavelengths with a multivariate Gaussian model to retrieve thicknesses and their uncertainties from the reflectance data. A sympathetic reader would care because full spectroscopic methods are slow and equipment-heavy, while this approach works with standard microscopes and off-the-shelf filters, potentially speeding up fabrication of van der Waals devices where thickness verification is a key step. The result shows mean 95% confidence intervals of 8.3 nm for layers up to 691 nm thick.

Core claim

By sampling the reflectance with just five strategically chosen near-infrared bandpass filters and applying a robust thickness retrieval algorithm based on a multivariate Gaussian probability model, the method achieves thickness characterization up to 691 nm with a mean 95% confidence-interval width of 8.3 nm. The approach reduces the measurement to a small number of discrete intensity images suitable for conventional microscope architectures.

What carries the argument

The systematic framework for selecting optimal discrete wavelength samples of the material's reflectance together with the thickness retrieval algorithm based on a multivariate Gaussian probability model.

If this is right

  • The method enables direct thickness mapping without needing broadband spectroscopic equipment.
  • It is adaptable to other van der Waals materials and conventional optical thin-film systems.
  • It provides a foundation for scalable, real-time thickness characterization in dry-transfer fabrication workflows for van der Waals heterostructure devices.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • If the model generalizes well, similar sparse sampling strategies could be developed for other 2D materials without requiring new hardware.
  • Embedding this into automated imaging setups might allow in-line quality control during heterostructure assembly.
  • Further work could test whether fewer than five filters suffice for thinner films or different substrates.

Load-bearing premise

The multivariate Gaussian probability model accurately captures the reflectance statistics for the chosen discrete wavelengths and material system without significant model mismatch or unaccounted systematic errors in the thin-film optical response.

What would settle it

Measuring the same samples with both the five-filter method and a reference technique such as atomic force microscopy or full-range spectroscopic ellipsometry, then checking whether the retrieved thicknesses fall within the reported 8.3 nm confidence intervals on average.

Figures

Figures reproduced from arXiv: 2605.09843 by Benjamin Laudert, Falk Eilenberger, Fatemeh Abtahi, Sarka Vavreckova, Sebastian W. Schmitt.

Figure 1
Figure 1. Figure 1: Optical modeling and bandpass filter set optimization. (a) [PITH_FULL_IMAGE:figures/full_fig_p003_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: Multispectral imaging microscope and thickness validation. (a) [PITH_FULL_IMAGE:figures/full_fig_p005_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: Experimental validation and refinement of the reflectance model. (a) [PITH_FULL_IMAGE:figures/full_fig_p007_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: Thickness retrieval algorithm and statistical confidence framework. (a) [PITH_FULL_IMAGE:figures/full_fig_p009_4.png] view at source ↗
Figure 5
Figure 5. Figure 5: Thickness mapping and confidence analysis. [PITH_FULL_IMAGE:figures/full_fig_p011_5.png] view at source ↗
read the original abstract

We present a non-destructive, spatially resolved thickness characterization method for rhombohedral (3R) molybdenum disulfide (MoS$_2$) on polydimethylsiloxane (PDMS) substrates. Unlike broadband spectroscopic approaches, the proposed method reduces the measurement to a small number of discrete intensity images, enabling direct thickness mapping with a conventional microscope architecture and commercially available bandpass filters. Our approach combines a systematic framework for selecting optimal discrete wavelength samples of the material's reflectance with a robust thickness retrieval algorithm based on a multivariate Gaussian probability model. By sampling the reflectance with just five strategically chosen near-infrared bandpass filters, we demonstrate thickness characterization up to 691 nm with a mean 95% confidence-interval width of 8.3 nm. The method is adaptable to other van der Waals materials and conventional optical thin-film systems. It therefore provides a foundation for scalable, real-time thickness characterization in, e.g., dry-transfer fabrication workflows, where thickness screening remains a critical bottleneck for the production of van der Waals heterostructure devices.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 1 minor

Summary. The paper claims to introduce a sparse spectral imaging technique for mapping the thickness of 3R-MoS2 layers on PDMS substrates. By using only five strategically chosen near-infrared bandpass filters to capture discrete reflectance images and applying a multivariate Gaussian probability model, the method enables non-destructive thickness characterization up to 691 nm with an average 95% confidence interval width of 8.3 nm. The approach is positioned as an alternative to broadband spectroscopy, suitable for conventional microscopes and adaptable to other 2D materials and thin-film systems.

Significance. Should the claims be substantiated, this method could provide a significant practical tool for thickness characterization in van der Waals heterostructure fabrication by enabling real-time, spatially resolved mapping with minimal equipment. It reduces reliance on complex spectroscopic setups, potentially streamlining workflows where thickness screening is a bottleneck. The adaptability to other materials adds to its broader impact in the field of 2D materials and thin films.

major comments (2)
  1. [Abstract] The key performance claim of a mean 95% CI width of 8.3 nm is made without providing any information on the reflectance model used, the systematic framework for selecting the five filters, or how the confidence intervals were calculated and validated. This prevents verification of the central result.
  2. The multivariate Gaussian probability model is central to the thickness retrieval, yet no details are given on its construction, parameters, or validation against potential mismatches in the optical response of the 3R-MoS2/PDMS system.
minor comments (1)
  1. [Abstract] The abstract could benefit from a brief mention of the specific wavelength range or example filter selections to give readers a better sense of the method's implementation.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their careful review and for highlighting the need for greater methodological transparency. We address the major comments point by point below. The concerns are valid given the brevity of the abstract, and we will revise the manuscript to incorporate the requested details.

read point-by-point responses

  1. Referee: [Abstract] The key performance claim of a mean 95% CI width of 8.3 nm is made without providing any information on the reflectance model used, the systematic framework for selecting the five filters, or how the confidence intervals were calculated and validated. This prevents verification of the central result.

    Authors: We agree that the abstract lacks these specifics, which limits immediate verification. In the revised manuscript we will expand the abstract with concise statements on the reflectance model (standard transfer-matrix calculation for the 3R-MoS2/PDMS multilayer), the filter-selection framework (optimization of wavelength sampling to maximize sensitivity in the near-IR reflectance spectrum), and the confidence-interval procedure (derived from the posterior of the multivariate Gaussian model and validated by comparison with AFM reference measurements). Corresponding expanded descriptions will also be added to the main text. revision: yes

  2. Referee: [—] The multivariate Gaussian probability model is central to the thickness retrieval, yet no details are given on its construction, parameters, or validation against potential mismatches in the optical response of the 3R-MoS2/PDMS system.

    Authors: We concur that explicit details on the model are required. The revised manuscript will include a dedicated methods subsection describing the construction of the multivariate Gaussian (mean vector and covariance matrix estimated from calibration reflectance data at known thicknesses), the specific parameters employed, and the validation steps (including tests for robustness against small mismatches in the optical constants of 3R-MoS2 and PDMS by comparing model predictions to independent experimental spectra). revision: yes

Circularity Check

0 steps flagged

No significant circularity identified

full rationale

Only the abstract is available, which describes a method that combines a systematic framework for selecting optimal discrete wavelength samples with a multivariate Gaussian probability model for thickness retrieval. No equations, derivation steps, fitted parameters, or self-citations are provided in the text. Without access to the full derivation chain or specific reductions, no load-bearing steps can be shown to reduce by construction to the inputs. The claims rest on physical reflectance sampling and a probability model presented as independent of the demonstration data.

Axiom & Free-Parameter Ledger

1 free parameters · 1 axioms · 0 invented entities

Abstract-only review; ledger entries are inferred from stated components and marked as provisional.

free parameters (1)
  • optimal discrete wavelengths
    Strategically chosen near-IR bandpass filters; selection process not detailed but implies optimization that may involve fitting or search over material reflectance data.
axioms (1)
  • domain assumption Thin-film reflectance follows standard multilayer optical model
    Required for the multivariate Gaussian probability model to map intensities to thickness.

pith-pipeline@v0.9.0 · 5467 in / 1100 out tokens · 54104 ms · 2026-05-12T02:48:20.513216+00:00 · methodology

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Reference graph

Works this paper leans on

39 extracted references · 39 canonical work pages

  1. [1]

    Optical Bound States in Continuum in MoS2-Based Metasurface for Directional Light Emission

    N. Muhammad, Y. Chen, C.-W. Qiu, and G. P. Wang. “Optical Bound States in Continuum in MoS2-Based Metasurface for Directional Light Emission”. In:Nano Letters21.2 (Jan. 27, 2021), pp. 967–972.issn: 1530-6984.doi: 10.1021/acs.nanolett.0c03818

    work page doi:10.1021/acs.nanolett.0c03818 2021

  2. [2]

    Van der Waals Materials for Applications in Nanophotonics

    P. G. Zotev, Y. Wang, D. Andres-Penares, et al. “Van der Waals Materials for Applications in Nanophotonics”. In:Laser & Photonics Reviews17.8 (Aug. 2023), p. 2200957.issn: 1863-8880.doi:10.1002/lpor.202200957

    work page doi:10.1002/lpor.202200957 2023

  3. [3]

    Nanos- tructured Transition Metal Dichalcogenide Multilayers for Advanced Nanophotonics

    B. Munkhbat, B. K¨ uc ¸¨ uk¨oz, D. G. Baranov, T. J. Antosiewicz, and T. O. Shegai. “Nanos- tructured Transition Metal Dichalcogenide Multilayers for Advanced Nanophotonics”. In: Laser & Photonics Reviews17.1 (Jan. 2023), p. 2200057.issn: 1863-8880, 1863-8899. doi:10.1002/lpor.202200057

    work page doi:10.1002/lpor.202200057 2023

  4. [4]

    Coupling-induced perfect absorption in TMD-based metasurface

    J. Du, K. Wang, P. Dai, et al. “Coupling-induced perfect absorption in TMD-based metasurface”. In:Applied Physics Letters126.16 (Apr. 21, 2025), p. 161701.issn: 0003-6951.doi:10.1063/5.0267287

    work page doi:10.1063/5.0267287 2025

  5. [5]

    Second- harmonic generation in molybdenum disulfide

    G. A. Wagoner, P. D. Persans, E. A. Van Wagenen, and G. M. Korenowski. “Second- harmonic generation in molybdenum disulfide”. In:Journal of the Optical Society of America B15.3 (Mar. 1, 1998), p. 1017.issn: 0740-3224, 1520-8540.doi: 10.1364/ JOSAB.15.001017

    work page 1998

  6. [6]

    Atomically phase-matched second-harmonic generation in a 2D crystal

    M. Zhao, Z. Ye, R. Suzuki, et al. “Atomically phase-matched second-harmonic generation in a 2D crystal”. In:Light: Science & Applications5.8 (Mar. 14, 2016), e16131–e16131. issn: 2047-7538.doi:10.1038/lsa.2016.131

    work page doi:10.1038/lsa.2016.131 2016

  7. [7]

    3R MoS2 with Broken Inversion Symmetry: A Promising Ul- trathin Nonlinear Optical Device

    J. Shi, P. Yu, F. Liu, et al. “3R MoS2 with Broken Inversion Symmetry: A Promising Ul- trathin Nonlinear Optical Device”. In:Advanced Materials29.30 (Aug. 2017), p. 1701486. issn: 0935-9648, 1521-4095.doi:10.1002/adma.201701486

    work page doi:10.1002/adma.201701486 2017

  8. [8]

    Towards compact phase-matched and waveguided nonlinear optics in atomically layered semiconductors

    X. Xu, C. Trovatello, F. Mooshammer, et al. “Towards compact phase-matched and waveguided nonlinear optics in atomically layered semiconductors”. In:Nature Photonics 16.10 (Oct. 2022), pp. 698–706.issn: 1749-4885, 1749-4893.doi: 10.1038/s41566- 022-01053-4. 16

    work page doi:10.1038/s41566- 2022

  9. [9]

    Giant second-harmonic generation in ferroelectric NbOI2

    I. Abdelwahab, B. Tilmann, Y. Wu, et al. “Giant second-harmonic generation in ferroelectric NbOI2”. In:Nature Photonics16.9 (Sept. 2022), pp. 644–650.issn: 1749-4893.doi: 10.1038/s41566-022-01021-y

    work page doi:10.1038/s41566-022-01021-y 2022

  10. [10]

    Twist Phase Matching in Two-Dimensional Materials

    H. Hong, C. Huang, C. Ma, et al. “Twist Phase Matching in Two-Dimensional Materials”. In:Physical Review Letters131.23 (Dec. 4, 2023), p. 233801.issn: 0031-9007, 1079-7114. doi:10.1103/PhysRevLett.131.233801

    work page doi:10.1103/physrevlett.131.233801 2023

  11. [11]

    Polarization entanglement enabled by orthogonally stacked van der Waals NbOCl2 crystals

    Q. Guo, Y.-K. Wu, D. Zhang, et al. “Polarization entanglement enabled by orthogonally stacked van der Waals NbOCl2 crystals”. In:Nature Communications15.1 (Dec. 2, 2024), p. 10461.issn: 2041-1723.doi:10.1038/s41467-024-54876-w

    work page doi:10.1038/s41467-024-54876-w 2024

  12. [12]

    Stacking-Controlled Growth of rBN Crystalline Films with High Nonlinear Optical Conversion Efficiency up to 1%

    J. Qi, C. Ma, Q. Guo, et al. “Stacking-Controlled Growth of rBN Crystalline Films with High Nonlinear Optical Conversion Efficiency up to 1%”. In:Advanced Materials36.11 (Mar. 2024), p. 2303122.issn: 0935-9648, 1521-4095.doi: 10.1002/adma.202303122

    work page doi:10.1002/adma.202303122 2024

  13. [13]

    3R-stacked transition metal dichalcogenide non-local metasurface for efficient second-harmonic generation

    Z. H. Peng, M. Cotrufo, D. Xu, et al. “3R-stacked transition metal dichalcogenide non-local metasurface for efficient second-harmonic generation”. In:Nature Photonics19.12 (Dec. 2025), pp. 1376–1384.issn: 1749-4893.doi:10.1038/s41566-025-01781-3

    work page doi:10.1038/s41566-025-01781-3 2025

  14. [14]

    Ultrathin 3R-MoS2 metasurfaces with atomically precise edges for efficient nonlinear nanophotonics

    G. Zograf, B. K¨ uc ¸¨ uk¨oz, A. Y. Polyakov, et al. “Ultrathin 3R-MoS2 metasurfaces with atomically precise edges for efficient nonlinear nanophotonics”. In:Communications Physics8.1 (July 2, 2025), p. 271.issn: 2399-3650.doi: 10.1038/s42005-025-02194- y

    work page doi:10.1038/s42005-025-02194- 2025

  15. [15]

    Ultrafast all-optical switching in nonlinear 3R-MoS2 van der Waals metasurfaces

    L. Seidt, T. Weber, A. A. Seredin, et al. “Ultrafast all-optical switching in nonlinear 3R-MoS2 van der Waals metasurfaces”. In:npj Nanophotonics2.1 (Sept. 2, 2025), p. 37. issn: 2948-216X.doi:10.1038/s44310-025-00083-4

    work page doi:10.1038/s44310-025-00083-4 2025

  16. [16]

    C.et al.Core-Shell Germanium/Germanium– Tin Nanowires Exhibiting Room-Temperature Direct- and Indirect-Gap Photoluminescence.Nano Letters16, 7521–7529 (2016)

    Y. Zhu, Y.-H. Hou, Q. Cai, L. -J. Chen, R. Peng, and M. Wang. “Nonreciprocal-Like Chiral Second-Harmonic Generation in a Chiral 3R-MoS2 Metasurface”. In:Nano Letters (Apr. 14, 2026), acs.nanolett.6c00536.issn: 1530-6984, 1530-6992.doi: 10.1021/acs. nanolett.6c00536

    work page doi:10.1021/acs 2026

  17. [17]

    Quantum Emitters in Hexagonal Boron Nitride

    I. Aharonovich, J.-P. Tetienne, and M. Toth. “Quantum Emitters in Hexagonal Boron Nitride”. In:Nano Letters22.23 (Dec. 14, 2022), pp. 9227–9235.issn: 1530-6984.doi: 10.1021/acs.nanolett.2c03743

    work page doi:10.1021/acs.nanolett.2c03743 2022

  18. [18]

    Ultrathin quantum light source with van der Waals NbOCl2 crystal

    Q. Guo, X.-Z. Qi, L. Zhang, et al. “Ultrathin quantum light source with van der Waals NbOCl2 crystal”. In:Nature613.7942 (Jan. 5, 2023), pp. 53–59.issn: 0028-0836, 1476-4687.doi:10.1038/s41586-022-05393-7

    work page doi:10.1038/s41586-022-05393-7 2023

  19. [19]

    A tunable transition metal dichalcogenide entangled photon-pair source

    M. A. Weissflog, A. Fedotova, Y. Tang, et al. “A tunable transition metal dichalcogenide entangled photon-pair source”. In:Nature Communications15.1 (Sept. 1, 2024), p. 7600. issn: 2041-1723.doi:10.1038/s41467-024-51843-3

    work page doi:10.1038/s41467-024-51843-3 2024

  20. [20]

    Polarization-entangled photon-pair source with van der Waals 3R-WS2 crystal

    J. Feng, Y.-K. Wu, R. Duan, et al. “Polarization-entangled photon-pair source with van der Waals 3R-WS2 crystal”. In:eLight4.1 (Aug. 23, 2024), p. 16.issn: 2662-8643.doi: 10.1186/s43593-024-00074-6

    work page doi:10.1186/s43593-024-00074-6 2024

  21. [21]

    Quasi-phase-matching enabled by van der Waals stacking

    Y. Tang, K. Sripathy, H. Qin, et al. “Quasi-phase-matching enabled by van der Waals stacking”. In:Nature Communications15.1 (Nov. 18, 2024), p. 9979.issn: 2041-1723. doi:10.1038/s41467-024-53472-2

    work page doi:10.1038/s41467-024-53472-2 2024

  22. [22]

    Quasi-phase-matched up- and down-conversion in periodically poled layered semiconductors

    C. Trovatello, C. Ferrante, B. Yang, et al. “Quasi-phase-matched up- and down-conversion in periodically poled layered semiconductors”. In:Nature Photonics19.3 (Mar. 2025), pp. 291–299.issn: 1749-4893.doi:10.1038/s41566-024-01602-z

    work page doi:10.1038/s41566-024-01602-z 2025

  23. [23]

    Metuh, P

    P. Metuh, P. Wyborski, A. Paralikis, et al.Integrated on-chip quantum light sources on a van der Waals platform. Dec. 17, 2025.doi: 10.48550/arXiv.2512.15337. arXiv: 2512.15337 [physics]. Pre-published. 17

    work page doi:10.48550/arxiv.2512.15337 2025

  24. [24]

    Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides

    D. Moon, W. Lee, C. Lim, et al. “Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides”. In:Nature638.8052 (Feb. 2025), pp. 957–964.issn: 1476-4687.doi: 10.1038/s41586-024-08492-9

    work page doi:10.1038/s41586-024-08492-9 2025

  25. [25]

    Visibility of hexagonal boron nitride on transparent substrates

    D. C. Nguyen, M. Kim, M. Hussain, et al. “Visibility of hexagonal boron nitride on transparent substrates”. In:Nanotechnology31.19 (May 8, 2020), p. 195701.issn: 0957- 4484, 1361-6528.doi:10.1088/1361-6528/ab6bf4

    work page doi:10.1088/1361-6528/ab6bf4 2020

  26. [26]

    High-Throughput Optical Identification and Statistical Analysis of Atomically Thin Semiconductors

    J. G. Crimmann, M. N. Junker, Y. M. Glauser, N. Lassaline, G. Nagamine, and D. J. Norris. “High-Throughput Optical Identification and Statistical Analysis of Atomically Thin Semiconductors”. In:Advanced Optical Materials13.16 (2025), p. 2500150.issn: 2195-1071.doi:10.1002/adom.202500150

    work page doi:10.1002/adom.202500150 2025

  27. [27]

    Thickness Dependence of Linear and Nonlinear Optical Properties of Multilayer 3R-MoS2

    F. Abtahi, A. Shaji, G. Q. Ngo, et al. “Thickness Dependence of Linear and Nonlinear Optical Properties of Multilayer 3R-MoS2”. In:Advanced Optical Materials14.7 (2026), e03498.issn: 2195-1071.doi:10.1002/adom.202503498

    work page doi:10.1002/adom.202503498 2026

  28. [28]

    Mechanotunable Surface Lattice Resonances in the Visible Optical Range by Soft Lithography Templates and Directed Self-Assembly

    V. Gupta, P. T. Probst, F. R. Goßler, et al. “Mechanotunable Surface Lattice Resonances in the Visible Optical Range by Soft Lithography Templates and Directed Self-Assembly”. In:ACS Applied Materials & Interfaces11.31 (Aug. 7, 2019), pp. 28189–28196.issn: 1944-8244.doi:10.1021/acsami.9b08871

    work page doi:10.1021/acsami.9b08871 2019

  29. [29]

    Recent advances in techniques for hyperspectral image processing

    A. Plaza, J. A. Benediktsson, J. W. Boardman, et al. “Recent advances in techniques for hyperspectral image processing”. In:Remote Sensing of Environment. Imaging Spectroscopy Special Issue 113 (Sept. 1, 2009), S110–S122.issn: 0034-4257.doi: 10.1016/j.rse.2007.07.028

    work page doi:10.1016/j.rse.2007.07.028 2009

  30. [30]

    Compressive Coded Aperture Spectral Imaging: An Introduction

    G. R. Arce, D. J. Brady, L. Carin, H. Arguello, and D. S. Kittle. “Compressive Coded Aperture Spectral Imaging: An Introduction”. In:IEEE Signal Processing Magazine31.1 (Jan. 2014), pp. 105–115.issn: 1558-0792.doi:10.1109/MSP.2013.2278763

    work page doi:10.1109/msp.2013.2278763 2014

  31. [31]

    Microsphere-assisted hyperspectral imaging: super- resolution, non-destructive metrology for semiconductor devices

    J. Park, Y. Choi, S. Kwon, et al. “Microsphere-assisted hyperspectral imaging: super- resolution, non-destructive metrology for semiconductor devices”. In:Light: Science & Applications13.1 (May 28, 2024), p. 122.issn: 2047-7538.doi: 10.1038/s41377-024- 01469-3

    work page doi:10.1038/s41377-024- 2024

  32. [32]

    Thorlabs Inc.Spectral Filters. Jan. 11, 2026.url: https://www.thorlabs.com/ spectral-filters(visited on 01/11/2026)

    work page 2026

  33. [33]

    M. P. Deisenroth, A. A. Faisal, and C. S. Ong.Mathematics for Machine Learning. First Edition. Cambridge, United Kingdom: Cambridge University Press, 2020.isbn: 978-1-108-45514-5

    work page 2020

  34. [34]

    Hexagonal boron nitride nanopho- tonics: a record-breaking material for the ultraviolet and visible spectral ranges

    D. V. Grudinin, G. A. Ermolaev, D. G. Baranov, et al. “Hexagonal boron nitride nanopho- tonics: a record-breaking material for the ultraviolet and visible spectral ranges”. In: Materials Horizons10.7 (July 3, 2023), pp. 2427–2435.issn: 2051-6355.doi: 10.1039/ D3MH00215B

    work page 2023

  35. [35]

    Optical Constants of Several Multilayer Transition Metal Dichalcogenides Measured by Spectroscopic Ellipsometry in the 300–1700 nm Range: High Index, Anisotropy, and Hyperbolicity

    B. Munkhbat, P. Wr ´obel, T. J. Antosiewicz, and T. O. Shegai. “Optical Constants of Several Multilayer Transition Metal Dichalcogenides Measured by Spectroscopic Ellipsometry in the 300–1700 nm Range: High Index, Anisotropy, and Hyperbolicity”. In:ACS Photonics9.7 (July 20, 2022), pp. 2398–2407.issn: 2330-4022, 2330-4022.doi: 10.1021/acsphotonics.2c00433

    work page doi:10.1021/acsphotonics.2c00433 2022

  36. [36]

    Directly grown crystalline gallium phosphide on sapphire for nonlinear all-dielectric nanophotonics

    D. Khmelevskaia, D. I. Markina, V. V. Fedorov, et al. “Directly grown crystalline gallium phosphide on sapphire for nonlinear all-dielectric nanophotonics”. In:Applied Physics Letters118.20 (May 17, 2021), p. 201101.issn: 0003-6951.doi:10.1063/5.0048969. 18

    work page doi:10.1063/5.0048969 2021

  37. [37]

    Temperature-dependent dispersion model of float zone crystalline silicon

    D. Franta, A. Dubroka, C. Wang, et al. “Temperature-dependent dispersion model of float zone crystalline silicon”. In:Applied Surface Science. 7th International Conference on Spectroscopic Ellipsometry 421 (Nov. 1, 2017), pp. 405–419.issn: 0169-4332.doi: 10.1016/j.apsusc.2017.02.021

    work page doi:10.1016/j.apsusc.2017.02.021 2017

  38. [38]

    Interspecimen Comparison of the Refractive Index of Fused Silica

    I. H. Malitson. “Interspecimen Comparison of the Refractive Index of Fused Silica”. In: JOSA55.10 (Oct. 1, 1965), pp. 1205–1209.doi:10.1364/JOSA.55.001205

    work page doi:10.1364/josa.55.001205 1965

  39. [39]

    Gwyddion: an open-source software for SPM data analysis

    D. Neˇcas and P. Klapetek. “Gwyddion: an open-source software for SPM data analysis”. In: Open Physics10.1 (Feb. 1, 2012), pp. 181–188.issn: 2391-5471.doi: 10.2478/s11534- 011-0096-2. 19 Supplementary S1 VSI Measurements of 3R-MoS 2 on PDMS As stated in the main text, conventional thickness characterization techniques, such as vertical scanning interferom...

    work page doi:10.2478/s11534- 2012