Laser emission with excitonic gain in a ZnO planar microcavity

Bernard Gil (L2C); Christelle Brimont (L2C); F. Medard (LASMEA); F. Semond (CRHEA); Jes\'us Z\'u\~niga-P\'erez (CRHEA); Martine Mihailovic (LASMEA); Mathieu Leroux (CRHEA); Pierre Valvin (L2C); Sophie Bouchoule (LPN); Thierry Bretagnon (L2C)

arxiv: 1106.0183 · v1 · pith:N3MU2EA5new · submitted 2011-06-01 · ⚛️ physics.optics · cond-mat.other

Laser emission with excitonic gain in a ZnO planar microcavity

Thierry Guillet (L2C) , Christelle Brimont (L2C) , Pierre Valvin (L2C) , Bernard Gil (L2C) , Thierry Bretagnon (L2C) , F. Medard (LASMEA) , Martine Mihailovic (LASMEA) , Jes\'us Z\'u\~niga-P\'erez (CRHEA)

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Mathieu Leroux (CRHEA) F. Semond (CRHEA) Sophie Bouchoule (LPN)

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classification ⚛️ physics.optics cond-mat.other

keywords couplinggainlasermicrocavityplanarappearsbelowbranches

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The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.

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Laser emission with excitonic gain in a ZnO planar microcavity

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