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Seungheon Shin

Identifiers

  • name variant Seungheon Shin 0.60 · backfill

Papers (2)

  1. AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2 physics.app-ph · 2026 · author #1
  2. High Breakdown Field Multi-kV UWBG AlGaN Transistors physics.app-ph · 2026 · author #1

Mentions

  • 2606.02954 #1 · arxiv_oai · confidence 0.70 Seungheon Shin

Frequent Coauthors