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Andrew A. Allerman

Identifiers

  • name variant Andrew A. Allerman 0.60 · backfill

Papers (7)

  1. AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2 physics.app-ph · 2026 · author #7
  2. High Breakdown Field Multi-kV UWBG AlGaN Transistors physics.app-ph · 2026 · author #8
  3. First principles study of hBN-AlN short-period superlattice heterostructures cond-mat.mtrl-sci · 2018 · author #3
  4. Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs physics.app-ph · 2017 · author #5
  5. Tunnel-injected sub-260 nm ultraviolet light emitting diodes cond-mat.mtrl-sci · 2017 · author #5
  6. Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions cond-mat.mtrl-sci · 2016 · author #4
  7. Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes cond-mat.mes-hall · 2016 · author #4

Mentions

  • 2606.02954 #7 · arxiv_oai · confidence 0.70 Andrew A. Allerman

Frequent Coauthors