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Yinxuan Zhu

Identifiers

  • name variant Yinxuan Zhu 0.60 · backfill

Papers (2)

  1. AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2 physics.app-ph · 2026 · author #4
  2. High Breakdown Field Multi-kV UWBG AlGaN Transistors physics.app-ph · 2026 · author #5

Mentions

  • 2606.02954 #4 · arxiv_oai · confidence 0.70 Yinxuan Zhu

Frequent Coauthors