Not yet reviewed by Pith; the record is open.

Optical switches are one of the most important elements of integrated photonics. Here, we designed, fabricated and characterized several nanophotonic optical switches (NOSs) in silicon that exhibit ultra-compact footprint, along with excellent extinction ratios and operating bandwidths. Simulations indicate that our best device of dimensions 3umX3um and 0.3um device height can provide about 10dB extinction ratio with a bandwidth of 12nm, centered at the design wavelength of 1550nm. Three-dimensional finite-difference time-domain analysis in conjunction with a modified version of direct binary search algorithm was used to design the nanophotonic device structure. The modulation is a result of optical modulation of the refractive index of a photochromic material and an optimized geometry of the digital metamaterials that comprise the device. The devices are CMOS fabrication compatible and examples of ones designed using multi-state geometric optimization that will lead to a new class of ultra-compact and multi-functional active integrated-silicon devices.